大高宽比阶梯型铜微柱阵列的制作  

Fabrication of Large Aspect Ratio Stepped Copper Microcolumn Array

作　　者：杜立群[1,2] 袁博文 孔德健 王帅[2] 蔡小可 王胜羿 肖海涛 DU Liqun;YUAN Bowen;KONG Dejian;WANG Shuai;CAI Xiaoke;WANG Shengyi;XIAO Haitao(Key Laboratory for Precision and Non-Traditional Machining Technology of the Ministry of Education,Dalian University of Technology,Dalian 116024,China;Key Laboratory for Micro/Nano Technology and System of Liaoning Province,Dalian University of Technology,Dalian 116024,China)

机构地区：[1]大连理工大学精密与特种加工教育部重点实验室,大连116024 [2]大连理工大学辽宁省微纳米系统重点实验室,大连116024

出　　处：《航空制造技术》2023年第10期14-20,共7页Aeronautical Manufacturing Technology

基　　金：国家自然科学基金(51975103,51875083);大连市科技创新基金(2020JJ25CY018)。

摘　　要：基于THB–151N光刻胶的微电铸工艺制作了一种阶梯型铜微柱阵列。针对THB–151N光刻胶显影过程中20μm微盲孔显影困难和底部留膜的问题,提出了一种基于浸没式双向兆声波辅助的显影方法。仿真研究了兆声功率密度和微盲孔深宽比对显影液传质过程的影响。优选了兆声功率密度和微盲孔深宽比,并开展了兆声辅助显影的试验研究。同时,针对THB–151N胶膜因曝光剂量选择不当导致微盲孔侧壁垂直度差的问题,通过光刻试验分析了曝光剂量对微盲孔侧壁垂直度的影响,拟合出曝光剂量与胶膜厚度的经验方程。在上述工艺方法和试验研究的基础上,制作出高度300μm、整体高宽比达15∶1、最小边长20μm、4×6的阶梯型铜微柱阵列。In this paper,a stepped copper microcolumn array was fabricated based on the micro-electroforming process of THB–151N photoresist.In order to solve the problem of difficult development of 20μm micro-blind hole and film retention at the bottom during THB–151N photoresist development,a submerged bidirectional megasonic assisted development method was proposed.The influence of megasonic power density and aspect ratio of micro-blind hole on mass transfer process of developer was simulated.The megasonic power density and aspect ratio of micro-blind hole were optimized,and the megasonic assisted development was studied experimentally.At the same time,aiming at the poor verticality of sidewall of the micro-blind hole due to inappropriate exposure dose of THB–151N film,the effect of exposure dose on the verticality of sidewall of the micro-blind hole was discussed by lithography experiment,the empirical equation of preferred exposure dose and film thickness was fitted.On the basis of the above technological methods and experimental study,4×6 stepped copper microcolumn arrays with a height of 300μm,overall aspect ratio of 15∶1 and minimum side length of 20μm were fabricated.

关 键 词：铜微柱阵列 紫外光刻 显影 微电铸 兆声 

分 类 号：TN305.7[电子电信—物理电子学]