Implementation of 16 Boolean logic operations based on one basic cell of spin-transfer-torque magnetic random access memory  

作　　者：Yan HUANG Kaihua CAO Kun ZHANG Jinkai WANG Kewen SHI Zuolei HAO Wenlong CAI Ao DU Jialiang YIN Qing YANG Junfeng LI Jianfeng GAO Chao ZHAO Weisheng ZHAO 

机构地区：[1]Fert Beijing Institute,MIIT Key Laboratory of Spintronics,School of Integrated Circuit Science and Engineering,Beihang University,Beijing,100191,China [2]Beihang-Goertek Joint Microelectronics Institute,Qingdao Research Institute,Beihang University,Qingdao,266101,China [3]Institute of Microelectronics of the Chinese Academy of Sciences,Beijing,100029,China

出　　处：《Science China(Information Sciences)》2023年第6期246-253,共8页中国科学（信息科学）（英文版）

基　　金：supported by National Natural Science Foundation of China (Grant No.51901008);International Mobility Project (Grant No.B16001);National Key Technology Program of China (Grant No.2017ZX01032101);National Key R&D Program of China (Grant No.2018YFB0407602);National Natural Science Foundation of China (Grant No.92164206);International Collaboration Project (Grant No.B16001);VR Innovation Platform from Qingdao Science and Technology Commission;Magnetic Sensor Innovation Platform from Laoshan District。

摘　　要：In-memory computing(IMC)systems based on emerging nonvolatile memories(NVMs)provide a thorough solution for memory wall issues and von Neumann bottlenecks.Massive IMC schemes have been proposed by utilizing ingenious structures and additional auxiliary components.However,these schemes are not compatible with the basic cell(one memory unit and one transistor)of emerging random-access memory(RAM),which goes against low-power and high-density requirements.In this paper,we propose a logic implementation scheme based on one magnetic tunnel junction and one transistor(1MTJ-1T),which is the basic cell of spin-transfer-torque magnetic RAM(STT-MRAM).With no other assistance,complete 16 logic operations can be accomplished in two steps with their logic outputs in-situ stored in the MTJ.The area(0.2μm^(2))and energy consumption per logic operation(1.1-2.6 pJ)of the logic gates under 14 nm process node are evaluated using SPICE simulations,indicating its excellent performance.Our work exhibits a 1MTJ-1Tbased logic operation implementation,which can bridge the gap between STT-MRAM and high-performance IMC applications.

关 键 词：memory computing logic operation magnetic tunnel junctions TRANSISTOR spin transfer torque 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]