Gate-Tunable Negative Differential Conductance in Hybrid Semiconductor–Superconductor Devices  

作　　者：刘明黎 潘东 乐天 贺江波 贾仲谋 朱尚 杨光 吕昭征 刘广同 沈洁 赵建华 吕力 屈凡明 Ming-Li Liu;Dong Pan;Tian Le;Jiang-Bo He;Zhong-Mou Jia;Shang Zhu;Guang Yang;Zhao-Zheng Lyu;Guang-Tong Liu;Jie Shen;Jian-Hua Zhao;Li Lu;Fan-Ming Qu(Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;School of Physical Sciences,University of Chinese Academy of Sciences,Beijing 100049,China;State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Songshan Lake Materials Laboratory,Dongguan 523808,China)

机构地区：[1]Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China [2]School of Physical Sciences,University of Chinese Academy of Sciences,Beijing 100049,China [3]State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [4]Songshan Lake Materials Laboratory,Dongguan 523808,China

出　　处：《Chinese Physics Letters》2023年第6期50-55,共6页中国物理快报（英文版）

基　　金：the National Key Research and Development Program of China(Grant Nos.2022YFA1403400 and 2017YFA0304700);the National Natural Science Foundation of China(Grant Nos.12074417,92065203,92065106,61974138,11774405,11527806,and 12104489);the Strategic Priority Research Program B of Chinese Academy of Sciences(Grant Nos.XDB28000000 and XDB33000000);the Synergetic Extreme Condition User Facility sponsored by the National Development and Reform Commission;the Innovation Program for Quantum Science and Technology(2021ZD0302600);the support from Youth Innovation Promotion Association,Chinese Academy of Sciences(Grant Nos.2017156 and Y2021043).

摘　　要：Negative differential conductance(NDC)serves as a crucial characteristic that reveals various underlying physics and transport process in hybrid superconducting devices.We report the observation of gate-tunable NDC outside the superconducting energy gap on two types of hybrid semiconductor–superconductor devices,i.e.,normal metal–superconducting nanowire–normal metal and normal metal–superconducting nanowire–superconductor devices.Specifically,we study the dependence of the NDCs on back-gate voltage and magnetic field.When the back-gate voltage decreases,these NDCs weaken and evolve into positive differential conductance dips;and meanwhile they move away from the superconducting gap towards high bias voltage,and disappear eventually.In addition,with the increase of magnetic field,the NDCs/dips follow the evolution of the superconducting gap,and disappear when the gap closes.We interpret these observations and reach a good agreement by combining the Blonder–Tinkham–Klapwijk(BTK)model and the critical supercurrent effect in the nanowire,which we call the BTK-supercurrent model.Our results provide an in-depth understanding of the tunneling transport in hybrid semiconductor–superconductor devices.

关 键 词：SUPERCONDUCTOR TRANSPORT eventually 

分 类 号：O471[理学—半导体物理]