不同生长温度下Zn_(1-x)Sb_(x)O薄膜的结构与发光性能研究  

Structure and Luminescence Properties of Zn_(1-x)Sb_(x)O Films Grown at Different Temperatures

作　　者：朱建华 潘婧 岳建明 郝丽萍 支鹏伟 贾哲 ZHU Jian-hua;PAN Jing;YUE Jian-ming;HAO Li-ping;ZHI Peng-wei;JIA Zhe(Department of Materials and Chemical Engineering,Taiyuan University,Taiyuan 030032,China)

机构地区：[1]太原学院材料与化学工程系,山西太原030032

出　　处：《真空》2023年第3期18-23,共6页Vacuum

基　　金：国家卫健委“十三五”规划全国重点课题(NHFPC102018);山西省基础研究计划资助项目(202203021212018和202103021223008);山西省高等学校科技创新项目(2021L574);山西省教育科学“十四五”规划课题(GH-220045);院级课题(2021jg26和jg202214)。

摘　　要：采用固相反应法制备了不同比例的Sb掺杂ZnO靶材,并用脉冲激光沉积(PLD)法在Si(100)基底上制备了Zn_(1-x)Sb_(x)O薄膜。通过XRD、光致发光(PL)谱对所制薄膜进行了结构表征和性能分析,探讨了不同Sb掺杂量和不同生长温度对薄膜结晶质量和发光性能的影响。结果表明:对比纯ZnO的PL谱发现ZnSbO薄膜出现了紫外峰,且随着Sb浓度的增加,所有发光峰的强度相对增大;针对Zn_(0.98)Sb_(0.02)O薄膜,不同的基底生长温度改变了薄膜的紫外和蓝光发射强度,500℃下薄膜具有最好的结晶质量和最强的发光峰;对于500℃下生长的Zn_(0.98)Sb_(0.02)O薄膜,当激发光源波长从325nm变化到300nm,峰位红移,而且紫外峰与蓝光锋强度比由1∶3变为12∶1。据此,可以通过改变Sb掺杂量、生长温度和激发光源波长,从而制备出不同波段、不同强度的发光器件。Sb-doped ZnO targets with different ratios were prepared by solid-state reaction,and Zn_(1-x)Sb_(x)O thin films were prepared on Si(100)substrate by pulsed laser deposition(PLD)method.The structure and properties of the films were characterized by XRD and photoluminescence(PL),and the effects of Sb doping concentration and growth temperature on the crystalline quality and luminescence properties of the films were investigated.The results show that compared with the PL spectra of pure ZnO,it is found that the ZnSbO film exhibit UV peaks,and the intensity of all emission peaks increase relatively with the increasing of Sb concentration.For Zn_(0.98)Sb_(0.02)O thin films,the UV and blue light emission intensities of the films are changed by different substrate growth temperatures,and the film has the best crystallization quality and the strongest emission front at 500℃.For Zn_(0.98)Sb_(0.02)O thin film grown at 500℃,When the wavelength of the excitation light source changes from 325nm to 300nm,the peak position shifts red and the intensity ratio of UV peak to blue front changed from 1∶3 to 12∶1.According to the experimental results,light-emitting devices with different wavelength and different intensity can be prepared through changing the doping concentration of Sb,the growth temperature,and the length of the excitation light source.

关 键 词：PLD法 Zn_(1-x)Sb_(x)O薄膜 光致发光 缺陷复合体SbZn-2VZn 非辐射复合 

分 类 号：TN304.2[电子电信—物理电子学] O484.1[理学—固体物理] O484.41[理学—物理]