氧气压强对脉冲激光沉积法制备的CuO薄膜性能的影响  

Effect of Oxygen Pressure on the Properties of CuO Films Grown by Pulse Laser Deposition

作　　者：向玉春 朱建雷 袁亚[1] XIANG Yu-chun;ZHU Jian-lei;YUAN Ya(Xianyang Vocational&Technical College,Xi′an 712000,China)

机构地区：[1]咸阳职业技术学院,陕西西安712000

出　　处：《真空》2023年第3期42-45,共4页Vacuum

基　　金：陕西省自然科学基础研究计划(2022JQ416);咸阳职业技术学院2021年度科研基金项目(2021KJC12)。

摘　　要：采用脉冲激光沉积法(PLD)在玻璃衬底上沉积CuO薄膜,研究了氧气压强对CuO薄膜结构和光学、电学性能的影响。结果表明:在氧压为3×10^(-3)Pa,3~5Pa,和8~12Pa时,沉积的薄膜分别为单一Cu_(2)O相、混合Cu_(2)O/CuO相和单一CuO相;当氧压从5Pa增加到8Pa时,CuO薄膜的取向从(111)变化到(002);霍尔测试表明,在3~5Pa下沉积的CuO薄膜为p型,而在8~12Pa下沉积的薄膜为n型;氧气压强为5Pa时,薄膜电阻率较小,载流子浓度最大。The effect of oxygen pressure on the structure and photoelectric properties of CuO thin films deposited by pulsed laser deposition(PLD)on glass substrates was studied.The test results show that the film deposited at 3×10-3Pa,3-5Pa,and 8-12Pa show single Cu_(2)O phase,mixed Cu_(2)O/CuO phase and single CuO phase,respectively.The orientation of CuO films changes from(111)to(002)when the oxygen pressure increases from 5Pa to 8Pa.The hall test results show that CuO film deposited at 3-5Pa is p-type,while the CuO film deposited at 8-12Pa is n-type,and the resistivity is the lowest and the carrier concentration is the highest when the oxygen pressure is 5Pa.

关 键 词：氧化铜薄膜 半导体 脉冲激光沉积法 电学性能 光学性能 

分 类 号：O484[理学—固体物理]