超宽禁带半导体AlN功率电子学的新进展(续)  

New Progress in Ultra⁃Wide Bandgap Semiconductor AlN Power Electronics(Continued)

作　　者：赵正平[1,2] Zhao Zhengping(China Electronics Technology Co.,Ltd.,Beijing 100846,China;National Key Laboratory of Solid-State Microwave Devices and Circuits,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司,北京100846 [2]固态微波器件与电路全国重点实验室,石家庄050051

出　　处：《半导体技术》2023年第6期453-462,共10页Semiconductor Technology

摘　　要：以SiC和GaN为代表的第三代半导体功率电子学已成为当今功率电子学创新发展的主流,而有可能成为下一代固态功率电子学的超宽禁带半导体AlN功率电子学和同类的Ga_(2)O_(3)、金刚石功率电子学同样受到人们的关注。介绍了AlN功率电子学在AlN功率二极管、AlN功率高电子迁移率晶体管(HEMT)、AlN增强GaN HEMT和AlN的热管理应用等方面的最新进展,包括AlN异质多层外延结构、超晶格量子阱结构、AlN功率器件新结构设计、AlN新器件工艺、AlN超薄势垒层、AlN缓冲层、AlN钝化层、AlN耦合沟道层、AlN及其合金的热阻和AlN多晶陶瓷热导率等。分析评价了AlN功率电子学的发展、关键技术进步和发展态势。The third generation semiconductor power electronics represented by SiC and GaN has become the mainstream of innovation and development of power electronics.The ultra⁃wide bandgap semiconductor AlN power electronics,which may become the next generation of solid⁃state power elec⁃tronics,has also attracted people′s attention like Ga_(2)O_(3) and diamond power electronics.The new progress of AlN power electronics has been introduced in AlN power diode,AlN power high electron mobility transistor(HEMT),AlN enhanced GaN HEMT and AlN thermal management applications.The research results include AlN heterogeneous multilayer epitaxial structure,superlattice quantum well structure,new structure design of AlN power devices,AlN new device technology,AlN ultra⁃thin barrier layer,AlN buffer layer,AlN passivating layer,AlN coupling channel layer,thermal resistance of AlN and its alloy and thermal conductivity of AlN polycrystalline ceramics.The development,key technology progress and development trend of AlN power electronics have been analyzed and evaluated.

关 键 词：ALN AlN二极管 AlN高电子迁移率晶体管(HEMT) AlN增强GaN HEMT 热管理 

分 类 号：TN303[电子电信—物理电子学]