低导通压降MOS控制晶闸管的研制  

Development of the MOS Controlled Thyristor with Low On⁃State Voltage Drop

作　　者：刘中梦雪 黄伟 刘垚 张海峰 段懿晨 丁继洪 赵建强 Liu Zhongmengxue;Huang Wei;Liu Yao;Zhang Haifeng;Duan Yichen;Ding Jihong;Zhao Jianqiang(East China Institute of Photo-Electron IC,Bengbu 233030,China;School of Microelectronics,Fudan University,Shanghai 200433,China)

机构地区：[1]华东光电集成器件研究所,安徽蚌埠233030 [2]复旦大学微电子学院,上海200433

出　　处：《半导体技术》2023年第6期476-481,487,共7页Semiconductor Technology

摘　　要：基于6英寸(1英寸≈2.54 cm)半导体工艺平台研制了一款低导通压降的MOS控制晶闸管(MCT)。通过对MCT正向阻断状态和导通状态的理论分析,阐述p基区结构参数影响正向阻断特性和导通特性的机理。采用Silvaco TCAD软件建立静态特性模型并进行p基区结构参数仿真设计,得到最优掺杂浓度和厚度。结合仿真结果指导工艺参数优化制备MCT芯片,并对封装后器件性能进行了测试。测试结果表明,优化后器件正向阻断电压超过1600 V,脉冲峰值阳极电流为3640 A,导通压降在满足2.0 V设计值的基础上降低至1.7 V,正向阻断特性和导通特性均得到提高。Based on the 6 inch(1 inch≈2.54 cm)semiconductor process platform,a MOS con⁃trolled thyristor(MCT)with low on⁃state voltage drop was developed.Through the theoretical analysis of MCT forward blocking state and on⁃state state,the mechanism of p⁃base structure parameters affecting forward blocking characteristics and on⁃state characteristics was elaborated.The Silvaco TCAD software was utilized to establish a static characteristic model and simulate the parameters of p⁃base structure,thus the optimal doping concentration and thickness were obtained.According to the simulation results,the MCT chip was prepared by optimizing the process parameters and the performances of the packaged device were tested.The test results show that the forward blocking voltage of the optimized device is above 1600 V,the pulse peak anode current is 3640 A,and the on⁃state voltage drop is reduced to 1.7 V on the basis of meeting the design value of 2.0 V.The forward blocking characteristics and on⁃state characteristics of the optimized MCT are improved.

关 键 词：MOS控制晶闸管(MCT) 导通压降 正向阻断电压 p基区 静态特性 

分 类 号：TN34[电子电信—物理电子学]