基于硅基集成工艺的基板堆叠传输结构设计  

Design of Substrate Stacked Transmission Structure Based on Silicon⁃Based Integrated Process

作　　者：刘慧滢 焦晓亮[1] 王江 高艳红 岳超 岳琦 Liu Huiying;Jiao Xiaoliang;Wang Jiang;Gao Yanhong;Yue Chao;Yue Qi(Beijing Huahang Radio Measurement Institute,Beijing 102400,China;The 13 th Research Institute,CETC,Shijiazhuang 050051,China)

机构地区：[1]北京华航无线电测量研究所,北京102400 [2]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2023年第6期532-537,共6页Semiconductor Technology

摘　　要：随着电子产品向小型化、轻量化方向发展,堆叠基板的垂直互连成为高密度电路集成的关键技术。垂直互连结构会影响跨层传输的信号质量,进而影响电路的射频性能。基于该互连结构的主要传输原理,采用多层硅基板进行堆叠,通过焊球实现上下层的信号传输,利用HFSS仿真软件建立垂直互连结构模型,分析了关键结构参数对传输性能的影响。仿真结果表明优化后的垂直互连结构在DC~20 GHz的频段内回波损耗优于15 dB,传输损耗优于0.5 dB,能够实现良好的微波传输性能。With the development of electronic products towards miniaturization and lightweight,vertical interconnection of stacked substrates has become the key technology for high density circuit integration.The vertical interconnection structure may affect the quality of the signal transmitted across layers and thus the RF performance of the circuit.Based on the main transmission principle of the interconnection structure,multiple layers of silicon substrate were stacked,and the signal transmission from the bottom layer to the top layer was realized by solder balls.A vertical interconnection structure model was established by HFSS simulation software,and the influence of key structure parameters on transmission performance was analyzed.The simulation results show that the optimized vertical interconnection structure has a return loss of better than 15 dB and a transmission loss of better than 0.5 dB in DC-20 GHz,which can achieve good microwave transmission performance.

关 键 词：宽频带 垂直传输结构 类同轴结构 模型仿真 硅基板 

分 类 号：TN405.97[电子电信—微电子学与固体电子学]