SnO_(2)压敏电阻的非线性电学行为与MnO_(2)添加的关系  

Relationship Between Nonlinear Electrical Behavior of SnO_(2)Varistor and the Addition of MnO_(2)

作　　者：吴宇航 赵洪峰[1] 范少华 杨兴 谢清云 WU Yuhang;ZHAO Hongfeng;FAN Shaohua;YANG Xing;XIE Qingyun(The Wind Solar Storage Division of State Key Laboratory of Control and Simulation of Power System and Generation Equipment,School of Electrical Engineering,Xinjiang University,Urumqi 830046,China;Xi'an XD Arrester Co.,Ltd.,Xi'an 710200,China)

机构地区：[1]新疆大学电气工程学院电力系统及大型发电设备安全控制和仿真国家重点实验室风光储分室,乌鲁木齐830046 [2]西电避雷器有限责任公司,西安710200

出　　处：《电瓷避雷器》2023年第3期136-140,共5页Insulators and Surge Arresters

基　　金：国家自然科学基金(编号:51762038)。

摘　　要：用混合氧化物法制备掺杂CoO,Ta_(2)O_(5),MnO_(2)和Cr_(2)O_(5)的SnO_(2)压敏陶瓷。研究了MnO_(2)掺杂对SnO_(2)微观结构和电学性能的影响。通过阿伦尼乌斯图揭示其在低频与高频中产生了不同的活化能,这些活化能与氧在晶界面的吸附和反应有关。我们发现MnO_(2)提升了压敏电阻的非线性,在晶界区产生了O′和O″的吸附位点。O′和O″缺陷是晶界界面形成势垒的真正原因。SnO_(2)varistor ceramics doped with CoO,Ta_(2)O_(5),MnO_(2)and Cr_(2)O_(5)were prepared by the mixed oxide method.The effect of MnO_(2)doping on the microstructure and electrical properties of SnO_(2)was studied.The Arrhenius diagram reveals that it produces different activation energies at low and high frequencies,which are related to the adsorption and reaction of oxygen at the crystal interface.We found that MnO_(2)improves the non-linearity of the varistor and produces O'and O″adsorption sites in the grain boundary region.O'and O″defects are the real reason for the formation of barriers at the grain boundary interface.

关 键 词：SnO_(2)压敏陶瓷 非线性 肖特基势垒 阿伦尼乌斯图 

分 类 号：TM54[电气工程—电器] TQ174.75[化学工程—陶瓷工业]