研究弱辐射诱发GaN基Cascode型器件失效的机理  

Study on failure mechanism of GaN-based Cascode devices induced by weak radiation

作　　者：黄永 HUANG Yong(Xidian-Wuhu Research Institute)

机构地区：[1]西安电子科技大学芜湖研究院

出　　处：《中国集成电路》2023年第6期62-66,共5页China lntegrated Circuit

摘　　要：氮化镓(GaN)作为第三代半导体材料有着优异的物理属性,其器件有望在空间通讯领域等极端环境中大量应用。目前,已有报道研究GaN器件在辐照条件下的性能变化规律,但缺乏研究在辐照初期,即累计剂量较低时,常开型GaN基级联(Cascode)型器件的电学属性变化情况。本文使用低剂量铯源老化开路中的Cascode型器件,并推测初期弱辐照主要诱导了Cascode型器件中Si MOSFET通流性能的衰减,进而导致Cascode型器件的饱和电流下降。但GaN子器件可能未受辐照显著破坏,因此辐照前后Cascode型器件的耐压水平基本不变。此外,在不同栅源偏压下,辐照对Cascode型器件输出特性的线性区有差异化影响。Gallium Nitride(GaN)is a third-generation semiconductor material with excellent physical properties,and its devices are expected to be widely used in extreme environments such as space communication.Currently,there have been reports on the performance changes of GaN devices under radiation conditions,but there is a lack of research on the electrical property changes of normally-on GaN-based Cascode devices at low accumulated doses during the early stages of radiation.In this paper,Cascode devices aged in low-dose cesium sources were used,and it was speculated that weak irradiation in the early stages primarily induced a decrease in the Si MOSFET current capacity within the Cascode device,leading to a decrease in the saturation current of the Cascode devices.However,it is possible that GaN sub-device was not significantly damaged by radiation,so the breakdown voltage level of the Cascode devices remained basically unchanged before and after irradiation.Additionally,under different gate-source biases,radiation has a differentiated impact on the linear region of the output characteristics of the Cascode devices.

关 键 词：氮化镓 辐照 级联 电学属性 老化 

分 类 号：TN386[电子电信—物理电子学] TN304