物理气相传输法SiC衬底上生长AlN单晶的研究进展  

Research Progress on AIN Single Crystal Growth on SiC Substrate by Physical Vapor Transport Method

作　　者：朱亚军 王国栋[1] 俞瑞仙 曹文豪 王守志 胡小波[1] 徐现刚[1] 张雷[1] ZHU Yajun;WANG Guodong;YU Ruixian;CAO Wenhao;WANG Shouzhi;HU Xiaobo;XU Xiangang;ZHANG Lei(Shandong University,Institute of Novel Semiconductors,State Key Laboratory of Crystal Materials,Jinan 250100,China)

机构地区：[1]山东大学,新一代半导体材料研究院,晶体材料国家重点实验室,济南250100

出　　处：《硅酸盐学报》2023年第6期1439-1449,共11页Journal of The Chinese Ceramic Society

基　　金：山东省自然科学基金(ZR2022QF044);国家自然科学基金(51872164,52202265)。

摘　　要：氮化铝(AlN)是直接带隙半导体,具有超宽禁带宽度(6.2 eV)、高热导率[3.2 W/(cm·K)]、高表面声波速率(VL=10.13×10^(5)cm/s,VT=6.3×10^(5)cm/s)、高击穿场强和稳定的物理化学性能,是紫外/深紫外发光材料的理想衬底,由此制作的AlxGa1–xN材料,还可以实现200~365 nm波段内的连续发光;可以制作耐高压、耐高温、抗辐射和高频的电子器件,是具有巨大潜力的新一代半导体材料。本文介绍了物理气相传输法异质外延生长AlN单晶的原理,并从碳化硅(Si C)衬底上AlN单晶生长研究历程、Al N/SiC衬底生长AlN晶体以及偏晶向SiC衬底生长AlN晶体3个方面综述了SiC衬底上异质外延生长AlN晶体的研究进展。最后简述了SiC衬底上生长AlN单晶面临的挑战和机遇,展望了AlN材料的未来发展前景。Aluminum nitride(AIN)is a direct bandgap semiconductor with a ultrawide bandgap width(i.e.,6.2 eV),a high thermal conductivity(i.e.,3.4 W/ cm·K),a high surface acoustic rate(i.e.,V=10.97×10^(5 )cm/s,Vr=6.2×10^(5) cm/s),a high breakdown field strength as well as stable physical and chemical properties.AIN is an ideal substrate for ultraviolet/deep ultraviolet(DUV)luminescent materials.Al,Gar-xN materials made from AIN can achieve a continuous luminescence in a wavelength range of 200-365 nm.AIN crystal as one of developed semiconductor materials with a great potential can be used for high voltage,high temperature and high frequency electronic devices.This review introduced the heteroepitaxial growth principle of AIN single crystal by a physical vapor transport(PVT)method.Recent research progress on the heteroepitaxial growth of AIN on silicon carbide(SiC)substrate was represented based on the corresponding studies on the AIN growth on SiC substrates and the growth of AIN crystals on AIN/SiC substrates and off-orientation SiC substrates.Some challenges and opportunities of growing AIN single crystal on SiC substrate were briefly described,and the future development of AIN materials was prospected as well.

关 键 词：氮化铝单晶 碳化硅衬底 物理气相传输法 异质外延 

分 类 号：O78[理学—晶体学]