InGaAs自适应阱簇复合结构的偏振双峰辐射机制及能带特征  

Polarized Dual-Peak Radiation Mechanism and Energy-Band Characteristics of InGaAs Self-Fit Well-Cluster Composite Structure

作　　者：于庆南 李可 王新宇 吴坚[2] 张建伟[3] 刘子键 邢佳童 廖玲 季慧娴 王青 李晖 Yu Qingnan;Li Ke;Wang Xinyu;Wu Jian;Zhang Jianwei;Liu Zijian;Xing Jiatong;Liao Ling;Ji Huixian;Wang Qing;Li Hui(School of Electronic Information Engineering,Wuxi University,Wuxi 214105,Jiangsu,China;School of Physics,Beihang University,Beijing 100191,China;Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,Jilin,China)

机构地区：[1]无锡学院电子信息工程学院,江苏无锡214105 [2]北京航空航天大学物理学院,北京100191 [3]中国科学院长春光学精密机械与物理研究所,吉林长春130033

出　　处：《光学学报》2023年第10期197-202,共6页Acta Optica Sinica

基　　金：国家自然科学基金(62204172);江苏省双创博士(JSSCBS20210870,JSSCBS20210868);江苏省高等学校自然科学基金(22KJB140016);江苏省高等学校自然科学研究面上项目(17KJB510037);南京信息工程大学滨江学院引进人才启动基金(550221009,550221036)。

摘　　要：研究一种基于富铟团簇(IRC)效应的新型高应变InGaAs/GaAs自适应阱簇复合(WCC)量子结构,该结构具有比较灵活的能带调控能力,可产生一种特殊的偏振双峰光谱。为探究该WCC结构的偏振双峰辐射机制及能带特征,利用IRC效应生长获得了自适应WCC结构,并测量了该新型结构的偏振光致发光(PL)光谱,在横向电场(TE)和横向磁场(TM)模式下,PL光谱皆显示出特殊的双峰结构。这主要是铟原子的自适应迁移导致有源层同时存在铟组分正常和铟组分降低的In_(x)Ga_(1-x)As材料所致。根据半导体激光器的跃迁矩阵元理论和PL光谱的双峰能量间距,阐明不同偏振模式下的光谱双峰与多组分In_(x)Ga_(1-x)As材料的对应辐射机制,同时确定该WCC结构的混合能带特征。该研究内容对IRC效应和新型WCC发光结构的发展和应用具有重要研究意义。Objective In this paper,a novel,highly-strained InGaAs/GaAs self-fit well-cluster composite(WCC)quantum structure was investigated.The WCC structure differs from the conventional InGaAs/GaAs quantum-well structure,which exhibits considerable potential for numerous laser applications.Presently,the conventional quantum well exhibits a quasirectangle well structure,wherein each well consists of a fixed amount of indium and a single strain type in the material system.The WCC structure with variable indium content and thickness in an In_(x)Ga_(1-x)As/GaAs system can yield remarkable results,thereby facilitating the development of new laser types.This structure is associated with the indium-rich cluster(IRC)effect,wherein the IRCs were typically regarded as defects to be avoided for the conventional InGaAs quantum-well structure;hence,its special optical characteristics remain neglected.The migration of the indium atoms to the WCC structure would reduce the indium content in the corresponding InGaAs regions,consequently generating normal and indium-deficient In_(x)Ga_(1-x)As regions with hybrid strain types in the InGaAs material and aid in the production of special polarized spectra with dual peaks.Therefore,it is crucial to reveal the underlying corresponding luminescence mechanism between dual peaks in different polarized spectra and multiple In_(x)Ga_(1-x)As materials.This work offers new avenues for the development of new types of devices.Methods First,the InGaAs-based WCC quantum structure was developed via metal-organic chemical vapor-phase deposition.To generate the IRC effect by sufficient strain accumulation,the In_(0.17)Ga_(0.83)As/GaAs/GaAsP_(0.08)material system was designed as a periodic gain structure(Fig.1).The thickness of the In0.17Ga0.83As layer was designed to be 10 nm,because an InGaAs layer thinner than 10 nm is insufficient to obtain the IRC effect.Second,the luminescence mechanism of the WCC structure was studied by coating the WCC sample at a transmittance of T=99.99%at the dual facets to avoid

关 键 词：半导体激光器 INGAAS/GAAS 富铟团簇 偏振双峰光谱 混合能带 

分 类 号：O432[机械工程—光学工程]