应用于宽带的AlGaN/GaN MIS-HEMT高效率器件  

High power added efficiency AlGaN/GaN MIS-HEMTs for wide band application

作　　者：陈晓娟 张昇[2] 张一川 李艳奎 高润华[2] 刘新宇 魏珂[2] CHEN Xiao-Juan;ZHANG Shen;ZHANG Yi-Chuan;LI Yan-Kui;GAO Run-Hua;LIU Xin-Yu;WEI Ke(Xidian University,Xi'an 710071,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)

机构地区：[1]西安电子科技大学 [2]中国科学院微电子研究所

出　　处：《红外与毫米波学报》2023年第3期339-344,共6页Journal of Infrared and Millimeter Waves

基　　金：Supported by the National Natural Science Foundation of China (61822407,62074161,62004213);the National Key Research and Development Program of China under (2018YFE0125700)。

摘　　要：本文采用等离子体增强原子层沉积(PEALD)生长的SiN_(x)栅介质制备了宽带应用的AlGaN/GaN金属绝缘体半导体高电子迁移率晶体管(MIS-HEMTs),并在直流、小信号及大信号测试中评估了该介质层对器件性能的提升。测试结果表明改进器件具有高质量界面、宽栅极控制范围、良好的电流崩塌控制等优势,并确认了其在超过5 GHz下工作时仍能保持较高的功率附加效率(PAE)。在5 GHz连续波模式下,漏极电压V_(DS)=10 V时,MIS HEMT输出功率密度为1.4 W/mm,PAE可达到74.7%;V_(DS)增加到30 V时,功率密度提升到5.9 W/mm,PAE可保持在63.2%的水平;测试频率增加30 GHz,在相同的输出功率水平下,器件的PAE达到50.4%。同时,高质量栅极介电层还可允许器件承受高的栅极电压摆动:在功率增益压缩6 dB时,栅极电流保持在10^(-4)A/mm。上述结果证实了该SiN_(x)栅介质对器件性能的提升,使其满足宽带应用的高效率、高功率和可靠性要求,为系统和电路的宽带设计提供器件级的保障。In this study,we report a new design of GaN metal insulation semiconductor-high electron mobility transistor (MIS-HEMT) device with a 5 nm high-quality SiN_X dielectric layer deposited between gate and AlGaN barrier layer,to reduce the gate reverse leakage and improve power added efficiency (PAE).Superior characteristics of the device are proved in DC,small signal and large signal tests,showing the improved device owing a high-quality interface,a wide-control-range gate,the capability to control current collapse and the ability to maintain high PAE when serving at frequency higher than 5 GHz.Serving at 5 GHz with V_(DS)=10 V,the device showed an output power of 1.4 W/mm,with PAE of 74.4%;when V_(DS) rises to 30 V,output power increases to5.9 W/mm with PAE remaining at 63.2%;a high PAE (50.4%) remained even when the test frequency increased 30 GHz while keeping the same output power.Additionally,the high-quality gate dielectric layer allows the device to withstand a wide gate voltage swing:the gate current remained 10^(-4) A/mm even gain compressed to 6dB.The results demonstrate the improvement of the SiN_(x) on MIS-HEMT device,which provides device-level guarantee for the power application of the system and the design of broadband circuits.

关 键 词：MIS-HEMTs SiN_(x)栅介质 功率附加效率 栅压摆幅 宽带 

分 类 号：O48[理学—固体物理]