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作 者:付志粉 马建立 魏群[2] FU Zhi-fen;MA Jian-li;WEI Qun(School of Mechanics and Optoelectronic Physics,Anhui University of Science and Technology,Huainan 232001,China;School of Physics,Xidian University,Xi’an 710071,China)
机构地区:[1]安徽理工大学力学与光电物理学院,安徽淮南232001 [2]西安电子科技大学物理学院,西安710071
出 处:《西安文理学院学报(自然科学版)》2023年第3期66-71,共6页Journal of Xi’an University(Natural Science Edition)
基 金:教育部产学合作协同育人项目(220902518132440)。
摘 要:能带结构在固体物理/半导体物理的教学及相关科研活动中占有重要地位.本文从理论上推导了体硅的价带E~k色散关系模型,利用MATLAB语言编程绘制了体硅价带E~k色散关系图及等能面图,通过对价带顶处色散曲线进行抛物线拟合,获得了体硅各晶向空穴有效质量,所得有效质量结果与其他理论计算及实验测量结果符合较好.The energy band structure plays an important role in the teaching and related scientific research activities of solid-state physics/semiconductor physics.In this paper,the valence band E~k dispersion relation model of bulk silicon is deduced theoretically,and the valence band E~k dispersion relation diagram and isoenergetic surface diagram of bulk silicon are drawn by using MATLAB language programming.By parabola fitting the dispersion curve at the top of the valence band,the effective mass of holes in each crystal direction of bulk silicon is obtained,and the effective mass results obtained are in good agreement with other theoretical calculations and experimental measurements.
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