电源软启动电路MOS管失效原因分析  

Failure Cause Analysis of MOS in Soft Start Circuit of Power Supply

作　　者：刘东 吕方明[1] LIU Dong;LV Fangming(Nanjing Research Institute of Electronics Technology,Nanjing 210039,China)

机构地区：[1]南京电子技术研究所,江苏南京210039

出　　处：《电子质量》2023年第6期42-45,共4页Electronics Quality

摘　　要：MOS管具有体积小、导通电阻低等优点,在大功率电源的软启动电路中被大量地使用。以某大功率电源在工作过程中发生软启动电路MOS管损坏为案例,通过开封检查,确定该MOS管为过功率损坏。首先,建立了软启动仿真电路,分析了电路启动波形,得出了MOS管过功率损坏过程;然后,通过实验验证了仿真结果的正确性,定位到外部供电电源异常导致MOS管损坏;最后,提出了规避电源软启动电路MOS管失效的思路,对于提高电源软件启动电路MOS管的质量与可靠性具有重要的意义。MOS has the advantages of small volume and low on-resistance,so it is widely used in soft start circuit of high power supply.Taking the damage of MOS of soft start circuit during the operation of a high power supply as the case,through the opening inspection,it is confirmed that the MOS is damaged by overpower.Firstly,the soft start simulation circuit is established,the circuit start wave row is analyzed,and the overpower damage process of MOS is obtained.Then,the correctness of the simulation results is verified through experiments,and it is found that the MOS is damaged due to the abnormal external power supply.Finally,the solution to avoid the failure of MOS in the soft start circuit of power supply is put forward,which is of great significance to improve the quality and reliability of MOS in soft circuit of power supply.

关 键 词：软启动 金属氧化物半导体 过功率 仿真 失效分析 

分 类 号：TN386.1[电子电信—物理电子学]