具有纳米级表面裂纹的Si薄膜裂纹扩展模拟  

Crack propagation simulation of Si film with surface cracks at nanoscale

作　　者：许昌华 李梦一 茅寅 廖鹏飞 戴隆超[1] 唐纯 XU Changhua;LI Mengyi;MAO Yin;LIAO Pengfei;DAI Longchao;TANG Chun(College of Mechanical Engineering,Yangzhou University,Yangzhou 225127,China;College of Civil Engineering and Mechanics,Jiangsu University,Zhenjiang 212013,China)

机构地区：[1]扬州大学机械工程学院,江苏扬州225127 [2]江苏大学土木工程与力学学院,江苏镇江212013

出　　处：《传感器与微系统》2023年第7期23-27,共5页Transducer and Microsystem Technologies

基　　金：国家自然科学基金面上资助项目(11372269)。

摘　　要：以柔性材料为基础结合微纳米加工与集成技术,设计制造可实现各种功能的柔性电子元器件成为了研究的热点,其中作为重要组成的硅备受关注。普遍认为材料的宏观变形行为与微观材料变形机制有关,因此本文旨在基于分子动力学(MD)模拟研究弯曲下包含半椭球表面裂纹的硅薄膜模型的裂纹扩展,主要通过改变裂纹长轴与薄膜宽度的比例以及四点弯曲的加载速率来研究其与薄膜挠度变化的关系。实验表明,随着比值的增加,临界挠度先减小后增大。而在加载速率对薄膜临界挠度影响的实验中,发现随着速率增大,加载过程中会出现传输迟滞,模型需要更大的挠度才能达到断裂要求。Based on flexible materials combined with micro-nano processing and integration technology,the design and manufacture of flexible electronic components that can realize various functions has become a research hotspot.Among them,silicon which is an important component has attracted attention.It is generally believed that the macroscopic deformation behavior of materials is related to the microscopic material deformation mechanism,so this paper aims to study the crack propagation of a silicon thin film model containing a semi-ellipsoid surface crack under bending based on molecular dynamics(MD)simulation.Mainly by changing the ratio of crack long axis to film width and the loading rate of four paints bending as research their relationship with the change of film deflection.Experiments show that with the increase of the ratio,the critical deflection first decreases and then increases.In the experiment of the influence of the loading rate on the critical deflection of the film,It is found that when rate increases,there will be a transmission delay during the loading process,and the model needs a larger deflection to meet the fracture requirements.

关 键 词：单晶硅 裂纹扩展 大规模原子分子并行模拟器 表面裂纹 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置] O471.4[自动化与计算机技术—控制科学与工程] O485[理学—半导体物理]