基于IBIS模型的FPGA总剂量效应建模方法  

Modeling Method of FPGA Radiation Effect Based on IBIS Model

作　　者：张晓鹏[1] 刘锦辉[1] 梁博[1] 谭雯丹 张馨丹 刘刚[1] Zhang Xiaopeng;Liu Jinhui;Liang Bo;Tan Wendan;Zhang Xindan;Liu Gang(School of Computer Science and Technology,Xidian University,Xi’an 710000,China)

机构地区：[1]西安电子科技大学计算机科学与技术学院,西安710000

出　　处：《单片机与嵌入式系统应用》2023年第7期44-48,共5页Microcontrollers & Embedded Systems

摘　　要：提出了一种基于输入/输出缓冲区信息规范的FPGA的TID效应建模方法。将FPGA电路结构划分为3部分:输入缓冲区、输出缓冲区、逻辑功能区。缓冲区模型基于IBIS模型使用VHDLAMS建立,功能区模型基于特定需求采用VHDL建立。针对基于IBIS模型的建模需要,测量了FPGA在0 krad(Si)、820 krad(Si)和2.52 Mrad(Si)的IBIS模型和端口电平数据。通过对比仿真结果和试验结果,验证了所建模型能够反映FPGA受TID效应影响后的电平转换时间变长现象,结果误差在30%以内。所提建模方法为评估数字器件的TID效应提供了模型支撑,对数字系统抗辐射加固具有一定参考意义。A method for modeling the TID effect of FPGA is proposed based on the Input/Output Buffer Information Specification(IBIS).The structure of the FPGA circuit is divided into three parts:the input buffer,the output buffer and the logic functional area.The buffer model is modeled using VHDLAMS based on the IBIS model,and the functional area model is developed using VHDL based on specific requirements.The IBIS model and port level data for the FPGA at 0 krad(Si),820 krad(Si)and 2.52 Mrad(Si)are measured for the IBIS model based modeling requirements.Comparison of the simulations with the experimental data shows that the proposed model reflects the effect of a longer level transition time after the FPGA is impacted by the total dose effect,and the error between the simulated and experimental results is within 30%.The proposed modeling method provides model support for evaluating the TID effect of digital components and is valuable for anti-radiation of digital systems.

关 键 词：FPGA 总剂量效应 IBIS模型 混合信号模型 电平转换时间 

分 类 号：TP31[自动化与计算机技术—计算机软件与理论]