Tunneling via surface dislocation in W/β-Ga_(2)O_(3) Schottky barrier diodes  

作　　者：Madani Labed Ji Young Min Amina Ben Slim Nouredine Sengouga Chowdam Venkata Prasad Sinsu Kyoung You Seung Rim 

机构地区：[1]Department of Intelligent Mechatronics Engineering,Sejong University,Seoul 05006,Republic of Korea [2]Laboratory of Semiconducting and Metallic Materials(LMSM),University of Biskra,Biskra 07000,Algeria [3]Research and Development,Powercubesemi Inc.,Sujeong-gu,Seongnam-si,Gyeonggi-do 13449,Republic of Korea [4]Department of Semiconductor Systems Engineering,Sejong University,Seoul 05006,Republic of Korea

出　　处：《Journal of Semiconductors》2023年第7期23-27,共5页半导体学报（英文版）

基　　金：supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2020R1A2C1013693);the Technology Innovation Program (20016102, Development of 1.2k V Gallium oxide power semiconductor devices technology and RS2022-00144027, Development of 1.2k V-class low-loss gallium oxide transistor) by the Ministry of Trade, Industry, and Energy (MOTIE, Korea)

摘　　要：In this work,W/β-Ga_(2)O_(3)Schottky barrier diodes,prepared using a confined magnetic field-based sputtering method,were analyzed at different operation temperatures.Firstly,Schottky barrier height increased with increasing temperature from 100 to 300 K and reached 1.03 eV at room temperature.The ideality factor decreased with increasing temperature and it was higher than 2 at 100 K.This apparent high value was related to the tunneling effect.Secondly,the series and on-resistances decreased with increasing operation temperature.Finally,the interfacial dislocation was extracted from the tunneling current.A high dislocation density was found,which indicates the domination of tunneling through dislocation in the transport mecha-nism.These findings are evidently helpful in designing better performance devices.

关 键 词：β-Ga_(2)O_(3) SBD SBD paramatters TUNGSTEN low temperature tunneling via dislocation 

分 类 号：TN311.7[电子电信—物理电子学] TB34[一般工业技术—材料科学与工程]