Large-areaβ-Ga_(2)O_(3) Schottky barrier diode and its application in DC-DC converters  

作　　者：Wei Guo Zhao Han Xiaolong Zhao Guangwei Xu Shibing Long 

机构地区：[1]School of Microelectronics,University of Science and Technology of China,Hefei 230026,China

出　　处：《Journal of Semiconductors》2023年第7期41-44,共4页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China (NSFC) under Grant Nos. 61925110, 61821091, 62004184 and 62234007;the Key-Area Research and Development Program of Guangdong Province under Grant No. 2020B010174002

摘　　要：We demonstrate superb large-area verticalβ-Ga_(2)O_(3)SBDs with a Schottky contact area of 1×1 mm^(2)and obtain a high-efficiency DC-DC converter based on the device.Theβ-Ga_(2)O_(3)SBD can obtain a forward current of 8 A with a forward volt-age of 5 V,and has a reverse breakdown voltage of 612 V.The forward turn-on voltage(VF)and the on-resistance(Ron)are 1.17 V and 0.46Ω,respectively.The conversion efficiency of theβ-Ga_(2)O_(3)SBD-based DC-DC converter is 95.81%.This work indicates the great potential of Ga_(2)O_(3)SBDs and relevant circuits in power electronic applications.

关 键 词：β-Ga_(2)O_(3) SBD DC-DC converter 

分 类 号：TM46[电气工程—电器] TN311.7[电子电信—物理电子学]