不同像元间距红外探测器的铟柱生长研究  

Research on the Growth of Indium Bump for Infrared Detectors with Different Pixel Pitches

作　　者：张鹏[1] 马毅 聂媛 ZHANG Peng;MA Yi;NIE Yuan(North China Research Institute of Electro-Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《红外》2023年第7期1-7,共7页Infrared

摘　　要：分析了红外探测器铟柱生长工艺中不同像元间距情况下铟柱光刻孔内部的铟沉积情况和微观结构。解释了10μm小像元间距条件下铟柱高度较矮的原因,并给出了像元间距大小与剥离后铟柱高度之间的关系。针对10μm及以下像元间距红外探测器的铟柱生长,给出了解决铟柱高度问题的办法。使用新方法后,铟柱的高度可达到5μm以上。The indium deposition situation and microcosmic structure in the indium bump photoresist hole are analyzed in the indium bump growth process of infrared detectors with different pixel pitches.The reason for the low indium bump under the condition of 10 m pixel pitch is explained.And the relationship between the pixel pitch and indium bump height after lift-off is given.For the indium bump growth of infrared detectors with a smaller pixel pitch of 10 m and below,the methods to solve the problem of indium bump height are presented.After using the new methods,the indium bump height can reach more than 5 m.

关 键 词：红外探测器 铟柱 像元间距 

分 类 号：TN215[电子电信—物理电子学]