非晶氧化镓基日盲紫外探测器的研究进展  

Research progress of solar-blind UV photodetectors based on amorphous gallium oxide

作　　者：肖演 杨斯铄 程凌云 周游[1] 钱凌轩[1] Xiao Yan;Yang Sishuo;Cheng Lingyun;Zhou You;Qian Lingxuan(National Key Laboratory of Electronic Thin Films and Integrated Devices,School of Integrated Circuit Science and Engineering(Exemplary School of Microelectronics),University of Electronic Science and Technology of China,Chengdu,Sichuan 611731,China)

机构地区：[1]电子科技大学集成电路科学与工程学院(示范性微电子学院)/电子薄膜与集成器件全国重点实验室,四川成都611731

出　　处：《光电工程》2023年第6期1-20,共20页Opto-Electronic Engineering

基　　金：国家自然科学基金面上项目(62174025)。

摘　　要：日盲紫外探测在空间安全通信、臭氧空洞监测、导弹来袭告警等民用与军事领域有着广阔的应用场景和特定的市场价值。氧化镓(Ga_(2)O_(3))具有超宽的带隙(4.4~5.3 eV),几乎覆盖整个日盲波段,被认为是构筑日盲紫外探测器的理想材料之一。相较于单晶和外延氧化镓材料,非晶氧化镓(a-Ga_(2)O_(3))的制备温度更低,工艺相对简单,且衬底的适用范围更广,因此近些年成为Ga_(2)O_(3)基日盲紫外探测领域新的研究热点。本文旨在对a-Ga_(2)O_(3)基日盲紫外探测器的研究进展与现状进行介绍。首先介绍了a-Ga_(2)O_(3)的基本特性以及几种常见的制备方法,进而介绍了各种适用的器件类型、结构及性能。目前,a-Ga_(2)O_(3)基日盲紫外探测器主要分为MSM型、结型、TFT型和阵列型等几大类,通过器件结构优化,进一步提升探测性能。其中,MSM型器件结构简单,响应度高,应用最为广泛;结型器件通过构建肖特基结和异质结等,具有响应速度快、暗电流低和自供电的特点;TFT型器件能够在抑制暗电流的同时放大增益,且可以通过施加栅压脉冲来提升响应速度;阵列型器件主要用于大面积成像。最后,本文对a-Ga_(2)O_(3)日盲紫外探测器未来的发展趋势进行了总结和展望。The Solar-blind UV detection has wide application scenarios and unique market values in the civil and military fields,such as space security communication,ozone hole detection,missile attack warning and so on.Gallium oxide(Ga_(2)O_(3))has an extremely wide band gap(4.4-5.3 eV),almost covering the entire solar-blind UV region,and is considered as one of the most promising materials for the preparation of solar-blind UV photodetectors.Compared with single crystal or epitaxy materials,amorphous gallium oxide(a-Ga_(2)O_(3))has a lower deposition temperature,a relatively simple preparation process,and a much wider range of applicable substrates.Therefore,it has become a new research hot spot in the field of the Ga_(2)O_(3)solar-blind UV detection in most recent years.In this paper,the basic characteristics and most common preparation methods of a-Ga_(2)O_(3)are introduced firstly,and then the research progress and present situations of the a-Ga_(2)O_(3)-based solar-blind UV photodetector are introduced in details from the perspective of device structures.At present,a-Ga_(2)O_(3)based solar-blind UV photodetectors are mainly divided into MSM,junction,TFT and array types.By the optimization of device structures,the photodetection performance has been significantly improved.MSM device is the most widely used because of its simple structure and high responsivity.By constructing Schottky junction or heterojunction,the junction-type devices own the characteristics of fast response speed,low dark current,and self-power supply.TFT devices can suppress the dark current,amplify the gain and improve the recovery speed by applying gate voltage.Array-type devices can be used for large-area imaging.Finally,the future development trends of the a-Ga_(2)O_(3)solarblind UV photodetector are summarized.

关 键 词：非晶氧化镓 光电探测器 光电晶体管 薄膜晶体管探测 日盲紫外 超宽禁带半导体 

分 类 号：TN23[电子电信—物理电子学]