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作 者:张永锋 张淑芳[1] 王森[2] 丛国涛 ZHANG Yongfeng;ZHANG Shufang;WANG Sen;CONG Guotao(College of Information Science and Technology,Dalian Maritime University,Dalian,Liaoning,l16026,CHN;College of Intelligence and Electronic Engineering,Dalian Neusoft University of Information,Dalian,Liaoning,116023,CHN)
机构地区:[1]大连海事大学信息科学与技术学院,辽宁大连116026 [2]大连东软信息学院智能与电子工程学院,辽宁大连116023
出 处:《固体电子学研究与进展》2023年第3期214-220,共7页Research & Progress of SSE
基 金:国家自然科学基金资助项目(61231006);辽宁省自然科学基金资助项目(20180551028)。
摘 要:以经典FET准静态模型为基础,提出了FET分布式准静态模型,并推导出栅源耦合NMOS FET太赫兹辐射功率探测器的微分方程及其解析解。应用该模型计算得到的直流电压响应与集总模型和水动力模型的计算结果一致;与集总模型相比,泄漏长度偏差小于3.5%;与水动力模型相比,输入阻抗偏差小于10%,明显优于集总模型,且新的输入阻抗表达式不包含任何拟合系数,形式更加简单实用。该模型将经典FET准静态模型推广到太赫兹频段,并降低太赫兹频段FET电路仿真工具的开发成本。In this paper,based on the classic quasi-static model of FETs,a distributed quasi-stat-ic model was proposed,and the differential equations and analytical expressions of gate-source cou-pled NMOS FET-based terahertz radiation power detectors were derived.The DC voltage response calculated by applying this model is consistent with the calculation results of the lumped model and the hydrodynamic model;compared with the lumped model,the deviation of the leakage length is less than 3.5%;compared with the hydrodynamic model,the deviation of the input impedance is less than 10%,and is obviously better than the lumped model,and the new input impedance expression does not contain any fitting coefficients,and the form is simpler and more practical.This model extends the classic quasi-static model of FETs to the terahertz frequency band,thereby reducing the development cost of FET circuit simulation tools in the terahertz frequency band.
关 键 词:分布式准静态模型 场效应管 太赫兹辐射功率探测器
分 类 号:TN432[电子电信—微电子学与固体电子学]
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