改进K型单刀四掷射频MEMS开关  

Improved K-type SP4T RF MEMS Switch

作　　者：芮召骏 朱健[1] 黄镇 姜理利[1] RUI Zhaojun;ZHU Jian;HUANG Zhen;JIANG Lili(Nanjing Electronic Devices Institute,Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2023年第3期266-271,共6页Research & Progress of SSE

摘　　要：针对射频器件小型化以及5G通信发展的需求,设计了一款射频微机电系统(RF-MEMS)单刀四掷开关。该开关由一个改进型K型功分器和六个单刀单掷开关级联构成,并基于硅基MEMS工艺进行制造。其中,改进型K型功分器由多个Y型功分器串并联构成。改进的开关各端口具有插入损耗小和隔离度高的特点。最终流片的测试结果显示:该单刀四掷MEMS开关的插入损耗优于2.8 dB,隔离度优于29 dB。In view of the miniaturization of radio frequency(RF)devices and the development of 5G communication,the single-pole-four-throw(SP4T)switch of RF micro electron mechanical sys-tems(MEMS)was designed.The switch consisted of K-type power divider and six single-pole-single-throw(SPST)switches,and fabricated based on a silicon-based MEMS process.Among them,the improved K-type power divider was composed of multiple Y-type power dividers connected in series and parallel.The ports of the improved switch have the characteristics of low insertion loss and high isolation.The final tape-out results show that the switch has an insertion loss of better than 2.8 dB and an isolation of better than 29 dB.

关 键 词：射频MEMS 硅基工艺 单刀四掷开关 

分 类 号：TN403[电子电信—微电子学与固体电子学]