浮栅晶体管的辐照响应及退火特性研究  

Research on Irradiation Response and Annealing Characteristics of Floating Gate Transistors

作　　者：任李贤 孙静[1] 何承发[1] 荀明珠 REN Lixian;SUN Jing;HE Chengfa;XUN Mingzhu(Key Laboratory of Functional Materials and Devices for Special Environments of CAS,Xinjiang Key Laboratory of Electric Information Materials and Devices,Xinjiang Technical Institute of Physics and Chemistry of CAS,Urumqi,830011,CHN;University of Chinese Academy of Sciences,Beijing,100049,CHN)

机构地区：[1]中国科学院特殊环境功能材料与器件重点实验室,新疆电子信息材料与器件重点实验室,中国科学院新疆理化技术研究所,乌鲁木齐830011 [2]中国科学院大学,北京100049

出　　处：《固体电子学研究与进展》2023年第3期281-286,共6页Research & Progress of SSE

基　　金：国家自然科学基金面上项目(11975305);中国科学院西部青年学者项目(2021-XBQNXZ-020);特殊环境机器人技术四川省重点实验室开放基金资助项目(21kftk03)。

摘　　要：对浮栅晶体管进行了^(60)Co-γ射线总剂量辐照试验,研究了浮栅晶体管的电离辐射响应特性,通过对晶体管在辐照后的常温和高温100℃下的退火,分析了电离辐射环境下浮栅晶体管的陷阱电荷的产生及变化过程,监测了浮栅电荷存储能力。结果表明,辐照导致浮栅晶体管中多晶硅浮动栅极存储电荷的丢失,界面处感生的陷阱电荷数量远少于氧化物陷阱电荷及浮栅中电荷丢失量,退火效应可恢复浮栅受辐射影响的存储能力。试验数据为浮栅晶体管在电离辐射环境的测试及应用提供参考。The ionizing radiation response characteristics of floating gate transistors were studied by the^(60)Co-γrays.Through the annealing characteristics of ionizing radiation response parameters at room temperature and high temperature of 100℃after irradiation,the trap charge generation rate and variation process of floating gate transistors under ionizing radiation environment were analyzed.The charge storage capacity of the floating gate was monitored.The results showed that the irradiation can lead to a floating gate transistor main polysilicon floating grid storage charge loss,voltage separation of trap charge after statistical induced at the interface trap charge quantity is far less than the oxide trap charge and charge loss quantity in the floating gate,annealing effect can restore the storage capacity of floating gate affected by radiation.The experimental data provide reference for the test and application of the device in ionizing radiation environment.

关 键 词：浮栅晶体管 总剂量效应 陷阱电荷分离 辐照响应分析 

分 类 号：TN386.1[电子电信—物理电子学]