Analysis of displacement damage effects on the charge-coupled device induced by neutrons at Back-n in the China Spallation Neutron Source  

作　　者：薛院院 王祖军 陈伟 郭晓强 姚志斌 何宝平 聂栩 赖善坤 黄港 盛江坤 马武英 缑石龙 Yuan-Yuan Xue;Zu-Jun Wang;Wei Chen;Xiao-Qiang Guo;Zhi-Bin Yao;Bao-Ping He;Xu Nie;Shankun Lai;Gang Huang;Jiang-Kun Sheng;Wu-Ying Ma;Shi-Long Gou(State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics,Peking University,Beijing 100871,China;State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect,Northwest Institute of Nuclear Technology,Xi’an 710024,China;School of Materials Science and Engineering,Xiangtan University,Xiangtan 411105,China)

机构地区：[1]State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics,Peking University,Beijing 100871,China [2]State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect,Northwest Institute of Nuclear Technology,Xi’an 710024,China [3]School of Materials Science and Engineering,Xiangtan University,Xiangtan 411105,China

出　　处：《Chinese Physics B》2023年第7期435-442,共8页中国物理B（英文版）

基　　金：Project supported by the Foundation of State Key Laboratory of China(Grant Nos.SKLIPR1903Z,1803);the National Natural Science Foundation of China(Grant Nos.U2167208 and 11875223).

摘　　要：Displacement damage effects on the charge-coupled device(CCD)induced by neutrons at the back-streaming white neutron source(Back-n)in the China Spallation Neutron Source(CSNS)are analyzed according to an online irradiation experiment.The hot pixels,random telegraph signal(RTS),mean dark signal,dark current and dark signal non-uniformity(DSNU)induced by Back-n are presented.The dark current is calculated according to the mean dark signal at various integration times.The single-particle displacement damage and transient response are also observed based on the online measurement data.The trends of hot pixels,mean dark signal,DSNU and RTS degradation are related to the integration time and irradiation fluence.The mean dark signal,dark current and DSNU2 are nearly linear with neutron irradiation fluence when nearly all the pixels do not reach saturation.In addition,the mechanisms of the displacement damage effects on the CCD are demonstrated by combining the experimental results and technology computer-aided design(TCAD)simulation.Radiation-induced traps in the space charge region of the CCD will act as generation/recombination centers of electron-hole pairs,leading to an increase in the dark signal.

关 键 词：displacement damage effects charge-coupled device(CCD) China Spallation Neutron Source(CSNS) MECHANISMS technology computer-aided design(TCAD) 

分 类 号：TN386.5[电子电信—物理电子学] O571.53[理学—粒子物理与原子核物理]