一种高频高性能宽带混频器芯片的设计  

Design of A Broadband and High-Performance Mixer MMIC

作　　者：王朋[1] 郝志娟 WANG Peng;HAO Zhijuan(The 13th Research Institute,CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,河北石家庄050051

出　　处：《通信电源技术》2023年第8期59-61,66,共4页Telecom Power Technology

摘　　要：采用GaAs肖特基二极管工艺,设计研发了一款宽带高性能的双平衡无源混频器芯片。该混频器采用环形二极管和新型巴伦结构,获得了良好的变频损耗与高隔离度指标,大大减小了芯片面积,大幅提高了线性度和杂散抑制能力。其射频频率和本振频率覆盖15~40 GHz,中频频率覆盖DC-18 GHz,本振到射频隔离度高达50 dB以上,提高了M×N次组合杂散的抑制度,尺寸仅0.6 mm×1.0 mm,可以广泛用于微波收发系统的小型化设计。Using GaAs Schottky diode technology,a broadband and high-performance double-balanced passive mixer chip is designed and developed.The mixer adopts a ring diode and a new balun structure,which achieves good conversion loss and high isolation index,greatly reduces the chip area,and greatly improves the linearity and spurious suppression ability.Its radio frequency and local oscillator frequency cover 15~40 GHz,and the intermediate frequency covers DC-18 GHz.The isolation degree of local oscillator to radio frequency is as high as 50 dB,which improves the suppression degree of M×N combined spurs,and the size is only 0.6 mm×1.0 mm,it can be widely used in the miniaturization design of microwave transceiver systems.

关 键 词：肖特基二极管 双平衡混频器 巴伦结构 隔离度 

分 类 号：TN722[电子电信—电路与系统]