新一代超高速SiGe BiCMOS工艺研究进展  

Research Progress of New Generation SiGe BiCMOS Process with Ultra-High Speed

作　　者：马羽 张培健[2] 徐学良[2] 陈仙 易孝辉 MA Yu;ZHANG Peijian;XU Xueliang;CHEN Xian;YI Xiaohui(CETC Chips Technology(Group)Co.,Ltd.,Chongqing 400060,P.R.China;National Laboratory of Science and Technology on Analog Integrated Circuit,Chongqing400060,P.R.China)

机构地区：[1]中电科芯片技术(集团)有限公司,重庆400060 [2]模拟集成电路国家级重点实验室,重庆400060

出　　处：《微电子学》2023年第2期272-285,共14页Microelectronics

基　　金：国防科技工业抗辐照应用技术创新中心创新基金资助项目(KFZC2020020702);重庆市博士后特别资助项目(YBSH2103)。

摘　　要：综述了近年来国际上SiGe BiCMOS工艺的最新研究成果和工艺量产情况,具体展现和讨论了不同机构所研发的器件结构、工艺流程及其性能,并且展望了器件及工艺进一步优化的方向。虽然目前传统的双多晶自对准选择性外延基区结构实现了最佳的量产性能,但受限于内外基区连接电阻和选择性外延基区薄膜的不均匀性,其器件性能很难再有进一步提高。非选择性外延基区结构在实验室获得了极高的性能,但其自对准特性较低,这妨碍了其工业量产和更大规模集成。维持HBT器件与更小尺寸基线CMOS的工艺兼容性变得越来越困难。对高性能、工业量产和低成本进行综合,仍然是一项具有较大挑战性的任务。The latest research progress and mass production of SiGe BiCMOS technology in recent years have been reviewed.The device structure,process flow and performance reported by different institution are presented and discussed in detail.Moreover,the direction of further optimization of device and process is prospected.Although traditional DPSA-SEG architecture has achieved the best mass production performance,it is difficult to further improve its device performance due to the high base link resistance and the inhomogeneity of selective epitaxial base film.NSEG has achieved very high performance in the laboratory,but its low self-alignment degrees hinder industrial mass production and larger-scale integration.It is becoming more and more difficult to maintain the process compatibility of HBT devices with smaller baseline CMOS.It remains a difficult challenge to work out solutions that combine high performance,mass production,and low cost.

关 键 词：SiGe BiCMOS SiGe HBT 高频性能 工业量产 

分 类 号：TN405[电子电信—微电子学与固体电子学]