新型范德华绝缘体封装的MoS_(2)晶体管性能研究  

Study on the Performance of MoS_(2) Transistors Encapsulated by Novel van der Waals Insulators

作　　者：袁恺 闵成彧 陈鹏堃 胡欢 黄俊 杨帆 唐昭焕 YUAN Kai;MIN Chengyu;CHEN Pengkun;HU Huan;HUANG Jun;YANG Fan;TANG Zhaohuan(United Microelectronics Center Co.,Ltd.,Chongqing 400030,P.R.China;National Laboratory of Science and Technology on Analog Integrated Circuit,Chongqing 400060,P.R.China)

机构地区：[1]联合微电子中心有限责任公司,重庆400030 [2]模拟集成电路国家级重点实验室,重庆400060

出　　处：《微电子学》2023年第2期315-320,共6页Microelectronics

基　　金：模拟集成电路国家级重点实验室基金资助项目(614280204030317)。

摘　　要：以MoS_(2)为代表的二维半导体材料是下一代延续摩尔定律的潜在电子学新材料之一。然而,二维特性使得MoS_(2)中电子的输运行为对环境条件高度敏感。采用范德华绝缘体材料进行封装包覆,是目前消除二维半导体器件环境敏感性的有效方案之一。文章采用化学气相传输法制备新型范德华绝缘体材料CrOCl,并以少层CrOCl为介电层和封装材料,设计并制备了基于MoS_(2)的场效应晶体管。以CrOCl为底栅介电层及封装材料的MoS_(2)晶体管的室温场效应迁移率约为60 cm^(2)·V^(-1)·s^(-1),2 K下进一步增大至100 cm^(2)·V^(-1)·s^(-1)。此外,相比于无封装MoS_(2)晶体管高达20 V的回滞窗口,CrOCl的包覆有效消除了晶体管转移特性的回滞现象,证明其在二维材料电子学中的应用潜力。Two-dimensional semiconductor materials represented by MoS_(2) are one of the next-generation potential electronic materials that continue Moore's Law.However,the two-dimensional nature makes the transport behavior of electrons in MoS_(2)highly sensitive to environmental conditions.Encapsulation with van der Waals insulator materials is one of the effective solutions to eliminate the environmental sensitivity of two-dimentional semiconductor devices.In this paper,a novel van der Waals insulator material CrOCl was prepared by chemical vapor transport(CVT),and MoS_(2)-based field effect transistors were designed and fabricated by using few-layer CrOCl as the dielectric layer and encapsulation material.The room temperature field effect mobility of MoS_(2) transistor with CrOCl as bottom gate dielectric layer and encapsulation material is about 60 cm^(2).V^(-1).s^(-1),which further increases to 100 cm^(2).V^(-1).s^(-1)at 2 K.In addition,compared with the hysteresis window of 20 V for unencapsulated MoS_(2)transistors,the protection of CrOCl effectively eliminates the hysteresis phenomenon of transistor transfer characteristics,proving its application potential in 2D material electronics.

关 键 词：范德华绝缘体CrOCl MoS_(2)场效应晶体管 介电层 封装材料 回滞现象 

分 类 号：TN386[电子电信—物理电子学]