Spin−Orbit Torques Based on Topological Materials  

作　　者：Yi Wang Hyunsoo Yang 

机构地区：[1]Key Laboratory of Materials Modification by Laser,Ion and Electron Beams(Ministry of Education),School of Physics,Dalian University of Technology,Dalian 116024,China [2]Department of Electrical and Computer Engineering,National University of Singapore,117576,Singapore [3]Centre for Advanced 2D Materials,National University of Singapore,117546,Singapore

出　　处：《Accounts of Materials Research》2022年第10期1061-1072,共12页材料研究述评（英文）

基　　金：supported by the National Natural Science Foundation of China(12074052);Fundamental Research Funds for the Central Universities of China(DUT20LK30);the Natural Science Foundation of Liaoning Province of China(2021-YQ-06);H.Y.is supported by the SpOT-LITE Programme(A*STAR grant,A18A6b0057);through RIE2020 funds,Singapore Ministry of Education(MOE)Tier 2(R-263-000-E29-112);National Research Foundation(NRF)Singapore Investigatorship(NRFI06-2020-0015),and Samsung Electronics’University R&D Programme.

摘　　要：CONSPECTUS:Widespread applications of magnetic devices,such as magnetic random-access memory(MRAM),logic-in memory,and neuromorphic computing devices,require an efficient method to manipulate the local magnetization.One superior mechanism is the spin−orbit torque(SOT)associated with spin currents generated by charge currents in a material with strong spin−orbit coupling.A higher SOT efficiency(i.e.,a higher charge-to-spin conversion efficiency)is crucial for lowpower SOT device operation.Therefore,materials possessing the merit of a high SOT are urgently desired for the innovation of SOT devices.

关 键 词：CHARGE DESIRED mechanism 

分 类 号：TB30[一般工业技术—材料科学与工程]