基于扩展规格书数据的SiC功率MOSFET建模  

Modeling of SiC power MOSFET based on expanded datasheet values

作　　者：王克柔 吴忠强 WANG Kerou;WU Zhongqiang(Solax Power Co.,Ltd,Hangzhou 310063)

机构地区：[1]浙江艾罗网络能源技术股份有限公司,杭州310063

出　　处：《电气技术》2023年第7期47-55,共9页Electrical Engineering

摘　　要：本文提出一种实用的SiC功率MOSFET建模方法。所建立的模型可在图形化仿真软件中实现,用于电力电子电路损耗分析。首先,基于器件规格书数据建立器件的静态模型;然后,对SiC功率MOSFET的物理结构、物理特性进行分析,依据分析结果对规格书数据进行扩展,建立模型的各个动态部分,从而构成完整的模型;最后,建立多种商用SiC功率MOSFET模型,并对模型进行仿真和实验验证,验证结果显示模型具有令人满意的精度和适用范围。本文建模方法所用数据仅源自产品规格书,无须通过测量获取规格书之外的其他数据。In this paper,a practical SiC power MOSFET modeling method is presented.The models established by the method can be implemented in graphical simulation software for power electronic circuit loss analysis.Firstly,the static model is established based on device datasheet values.Then,the dynamic parts of the model are established based on the expanded datasheet values,according to the analysis of physical structure and characteristics of SiC power MOSFET,and therefore the complete model is established.Finally,models of various commercial SiC power MOSFET devices are established and validated by simulation and experiment.It is demonstrated that the proposed model has gratifying accuracy and generality.The source data used for the modeling method comes only from the product datasheet,and there is no need to acquire other data beyond the datasheet through measurement.

关 键 词：SiC功率MOSFET 建模 反向恢复 集总电荷模型 双脉冲测试 开关损耗 

分 类 号：TN386[电子电信—物理电子学]