Bonding mechanisms of SiO_(2) glass and 1060 Al by ultrasonic assisted active metal soldering process  

作　　者：武晓伟 符军红 卫首敬 董红杰 王健 王浩然 宋晓国 李卓霖 Wu Xiaowei;Fu Junhong;Wei Shoujing;Dong Hongjie;Wang Jian;Wang Haoran;Song Xiaoguo;Li Zhuolin(Shandong Provincial Key Lab of Special Welding Technology,Harbin Institute of Technology at Weihai,Weihai 264209,China;State Key Laboratory of Advanced Welding and Joining,Harbin Institute of Technology,Harbin 150001,China)

机构地区：[1]Shandong Provincial Key Lab of Special Welding Technology,Harbin Institute of Technology at Weihai,Weihai 264209,China [2]State Key Laboratory of Advanced Welding and Joining,Harbin Institute of Technology,Harbin 150001,China

出　　处：《China Welding》2023年第2期52-62,共11页中国焊接（英文版）

摘　　要：In this work,the ultrasonic assisted active metal soldering of SiO_(2) glass and Al was successfully achieved using Sn-2Ti solder filler at a low soldering temperature of 250℃in ambient atmosphere.A nano-crystallineα-Al2O3 layer with the average thickness of 13.9 nm and a nano-crystalline R-TiO_(2) layer with the average thickness of 16.2 nm are formed at the interface of Al/Sn and SiO_(2)/Sn respectively because Al elements did not diffuse from Al alloy side to SiO_(2) side,which verified that a sono-oxidation reaction had occurred during the ultrasonic assisted active metal soldering process.The soldered butt joints exhibited an average tensile strength of 25.31 MPa.

关 键 词：BONDING microstructure intermetallic compounds interface OXIDATION FRACTURE 

分 类 号：TN312.8[电子电信—物理电子学] TG454[金属学及工艺—焊接]