如何避免静电保护器件发生闩锁效应  

How to Prevent Latch-up in ESD Component

作　　者：杨城 Yang Cheng(Ruijie Networks Co.,Ltd.,Fuzhou 350000,China)

机构地区：[1]锐捷网络股份有限公司,福建福州350000

出　　处：《质量与可靠性》2023年第2期14-17,共4页Quality and Reliability

摘　　要：可控硅(Silicon Controller Rectifier,SCR)技术被广泛用于静电保护器件设计中,其优点是降低了箝位电压(Vclamp),但其特殊的I-V回扫特性容易触发闩锁。通过对闩锁效应原理进行研究,并结合实际的案例分析基于可控硅技术的静电保护器件I-V回扫特性与闩锁效应的关系,阐述静电保护器件发生闩锁效应的条件及如何避免发生闩锁效应的静电防护器件闩锁风险实测方法。The traditional method for lower clamp voltage of ESD component is by using SCR technology,the advantage of this feature is to reduce the clamp voltage,but there is a risk of latch-up causing by snap-back.Based on actual cases and the reasons why latch-up effect happens,the paper explains the conditions which make the latch-up effect occurs,and studies the measurement method of how to avoid the latch-up effect in ESD component.

关 键 词：可控硅 回扫 闩锁效应 静电保护器件 

分 类 号：TN40[电子电信—微电子学与固体电子学] TN03