新型铁电薄膜在MFIS器件中的应用  

Application of novel ferroelectric thin films in MFIS devices

作　　者：王树雨 芦春光 袁秋婷 仇加俊 付跃举[1] 蔡淑珍[1] 傅广生[1] WANG Shuyu;LU Chunguang;YUAN Qiuting;QIU Jiajun;FU Yueju;CAI Shuzhen;FU Guangsheng(College of Physics Science and Technology,Hebei University,Baoding 071002,China)

机构地区：[1]河北大学物理科学与技术学院,河北保定071002

出　　处：《河北大学学报（自然科学版）》2023年第4期364-368,共5页Journal of Hebei University(Natural Science Edition)

基　　金：国家自然科学基金-应急管理项目(11547185);河北省自然科学基金资助项目(E2015201233)。

摘　　要：利用新型铁电材料Na 0.5 Y 0.5 TiO 3(NYTO)薄膜高介电的特点,将其作为MFIS(metal-ferroelectric-insulator-semiconductor,MFIS)电容器的绝缘层,制备出Pt/Pb(Zr 0.2 Ti 0.8)O 3/NYTO/Si结构电容器,并对其进行XRD、SEM、C-V特性测试及I-V特性测试分析.分别对C-V存储窗口(记忆窗口,memory window)与应用电压以及绝缘层膜厚的关系进行了研究,结果表明记忆窗口数值比较理想.绝缘层厚度为40 nm、电容器的应用电压为32 V时,记忆窗口可达13 V.对制备的MFIS电容器I-V特性进行了研究,结果表明器件具备较低的漏电流密度,为1.08×10-6 A/cm 2,且其电流传导机制符合空间电荷限制电流导电机制.Ferroelectric Na 0.5 Y 0.5 TiO 3(NYTO)film is used as the insulating layer of MFIS(Metal-Ferroelectric-Insulate-Semiconductor)capacitors by its high dielectric properties.The Pt/Pb(Zr 0.2 Ti 0.8)O 3/NYTO/Si structure capacitors were prepared,and their XRD,SEM,C-V,and I-V characterristics were tested and analyzed.The dependence of C-V storage window on application voltage and insulation layer thickness were studied separately.The results show that the device has a large memory window when the thickness of the insulation layer is 40 nm.The memory window can reach 13 V with 32 V applied voltage.The MFIS capacitor has low leakage current density of 1.08×10-6 A/cm 2.The conduction mechanism of leakage current conforms to space charge limited current conduction mechanism.

关 键 词：新型铁电薄膜 MFIS电容器 记忆窗口 C-V特性 

分 类 号：O469[理学—凝聚态物理]