MEMS颅压监测传感器的设计与分析  

Design and analysis of MEMS intra cranial pressure monitoring sensor

作　　者：许高斌 董娜娜 高雅 李明珠 冯建国 XU Gaobing;DONG Nana;GAO Ya;LI Mingzhu;FENG Jianguo(Anhui Engineering Research Center of Microelectromechanical Systems,School of Microelectronics,Hefei University of Technology,Hefei 230000,China)

机构地区：[1]合肥工业大学微电子学院安徽省微电子机械系统工程技术研究中心,安徽合肥230000

出　　处：《电子元件与材料》2023年第6期699-703,共5页Electronic Components And Materials

基　　金：国家重点研发计划项目(2020YFB2008901);安徽省发改委研发创新项目(JZ2021AFKJ0050);安徽省工程技术研究中心项目(PA2022AKGY0012);中央高校基本科研业务费专项(JZ2021HGQA0254,JZ2021HGTA0147)。

摘　　要：为了实现对脑颅手术后脑组织液渗出压力的监测,以压阻效应为基础和提高灵敏度、线性度为目标,提出了一种四短梁扇形膜结构的压力传感器。通过改进膜结构使得应力分布集中,较大提高了传感器灵敏度。通过对传感器数学模型的理论计算,根据敏感膜结构设计的线性原则和可靠性原则,确定膜厚。采用ANSYS损件进行有限元仿真,分析了影响应力、挠度变化的参数并进行优化。在设计量程内和全范围过压1.125倍进行仿真,传感器灵敏度达到3.164 mV/kPa,可对颅压的变化做出迅速响应,有望用于临床颅压监测。To monitor the exudation pressure of brain tissue fluid after cranial operation,a pressure sensor was proposed with a fan-shaped membrane structure of four short beams,which was based on piezo-resistivity effect and aiming to improve the sensitivity linearity.By improving the membrane structure,the stress distribution was concentrated,and the sensitivity of the sensor was greatly improved.The film thickness was determined according to the linear and reliability principle of the structure design for the sensitive film.ANSYS was used for finite element simulation to analyze and optimize the parameters that affects the stress and deflection changes.The simulation was carried out in the design range and the full range of overpressure 1.125 times.The sensor sensitivity can reach 3.164 mV/kPa and can quickly respond to changes in cranial pressure for clinical cranial pressure monitoring.

关 键 词：MEMS 颅压 扇形四短梁 压阻效应 惠斯通电桥 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置] TH703[自动化与计算机技术—控制科学与工程]