不同能量质子辐照诱发CCD图像传感器性能退化实验与分析  

Experiment and Analysis of Performance Degradation of CCD Image Sensors Induced by Proton Radiation with Different Energy

作　　者：黄港 王祖军 吕伟[2] 聂栩 赖善坤 晏石兴 王敏文 卓鑫 于俊英 王忠明 Huang Gang;Wang Zujun;LüWei;Nie Xu;Lai Shankun;Yan Shixing;Wang Minwen;Zhuo Xin;Yu Junying;Wang Zhongming(School of Materials Science and Engineering,Xiangtan University,Xiangtan 411105,Hunan,China;National Key Laboratory of Intense Pulsed Irradiation Simulation and Effect,Northwest Institute of Nuclear Technology,Xi'an 710024,Shaanxi,China)

机构地区：[1]湘潭大学材料科学与工程学院,湖南湘潭411105 [2]西北核技术研究所强脉冲辐射环境模拟与效应全国重点实验室,陕西西安710024

出　　处：《光学学报》2023年第11期193-200,共8页Acta Optica Sinica

基　　金：国家自然科学基金(U2167208,11875223);国家重点实验室基金(SKLIPR1803,SKLIPR1903Z,SKLIPR2012)。

摘　　要：为了评估电荷耦合器件(CCD)在空间科学探测以及航天卫星成像等空间辐射环境中应用的可靠性,揭示了CCD转换增益以及线性饱和输出等重要性能参数的退化机制及其实验规律。辐照实验在质子回旋加速器上进行,质子能量为60 MeV和100 MeV,质子注量分别为1×10^(10)cm^(-2)、5×10^(10)cm^(-2)和1×10^(11)cm^(-2)。将CCD的主要性能参数在两个不同能量质子辐照后进行比较,实验结果表明,CCD的性能参数对质子辐照产生的电离损伤和位移损伤非常敏感,辐照后转换增益和线性饱和输出明显下降,且暗信号尖峰和暗电流明显增大。此外,分析了质子辐照CCD诱发的电离损伤和位移损伤,给出了CCD性能参数退化与质子辐照能量和注量的变化关系曲线。Objective As a photoelectric image sensor widely used in the field of aeronautics and astronautics,chargecoupled device(CCD)has attracted much attention due to its proton irradiation damage in the space environment.Performance degradation and function failure will be caused by irradiation damage when CCDs are applied to the orbiting satellite or the space imaging system.The irradiation damage effect of CCDs generally includes total ionizing dose,displacement effect,and single event effect.The total ionizing dose and displacement effect will cause permanent damage by influencing the semiconductor material in CCDs to induce oxide defects and interface defects.The single event effect will induce high charge density in the sensitive region of CCDs and disturb the output signal.The damage induced by the single event effect will be gradually recovered in the next signal transfer period.As an important factor causing CCD performance degradation in the space irradiation environment,proton irradiation damage is necessary to be studied,which is of significance to improve the reliability of CCD application in the space irradiation environment.We report the proton irradiation experiments of CCDs with different energy and fluence on proton cyclotrons.The degradation of CCD property parameters such as conversion gain,dark signal,and linear saturation output induced by proton irradiation is analyzed.We hope that our experiment and analysis can be helpful for designers to improve the reliability of CCD applications in space irradiation environments such as space exploration and satellite imaging.Methods CCD proton irradiation experiments with proton energy of 60 MeV and 100 MeV are carried out on Xi'an 200 MeV Proton Application Facility(XiPAF).The irradiation fluence is 1×1010,5×1010,and 1×1011 cm-2,respectively.All pins of the CCD are offline and unbiased during irradiation.The CCD model used in this experiment is ICX285AL.The pixel size is 6.45μm×6.45μm,and the total number of effective pixels is 1392×1024.Its advantag

关 键 词：光学器件 电荷耦合器件 质子辐照 转换增益 线性饱和输出 暗信号尖峰 

分 类 号：TN43[电子电信—微电子学与固体电子学]