MOS气体传感器的制作及对芥子气的响应研究  

Preparation of MOS gas sensor and research on response to mustard gas

作　　者：杨姝 高适 王学峰 张顺平[2] YANG Shu;GAO Shi;WANG Xuefeng;ZHANG Shunping(Performance Technology Center,Institute of NBC Defence,Beijing 102205,China;State Key Laboratory of Material Processing and Die&Mould Technology,School of Materials Science and Engineering,Huazhong University of Science and Technology,Wuhan 430074,China)

机构地区：[1]陆军防化学院履约技术中心,北京102205 [2]华中科技大学材料科学与工程学院材料成型与模具国家重点实验室,湖北武汉430074

出　　处：《传感器与微系统》2023年第8期39-42,共4页Transducer and Microsystem Technologies

摘　　要：为了提高金属氧化物半导体(MOS)气体传感器测试芥子气(HD)的性能,采用水热法制备了氧化锡(SnO_(2))、三氧化二铟(In_(2)O_(3))、三氧化钨(WO_(3))及其修饰改性的金属氧化物半导体气敏材料,利用光刻剥离工艺、电流体微喷工艺以及金丝球焊技术制作了16阵列气体传感器。搭建传感器测试平台,采用温度调制模式优化检测数据的采集,测试了32种材料对芥子气的响应信号,进而对材料进行有针对性的筛选,对未来实现低体积分数典型化学毒剂的快速响应、高效识别具有较大的现实意义。In order to improve performance of metal oxide semiconductor(MOS)gas sensor for testing mustard gas i.e.HD,SnO_(2),In_(2)O_(3),WO_(3)and their modified metal oxide semiconductor gas-sensitive materials are prepared by hydrothermal method.16 array gas-sensitive sensors are fabricated by photolithographic lift-off technique,electrofluid microjet technology and gold wire ball bonding technology.The sensor detection platform is set up,the temperature modulation mode is used to optimize the collection of detection data,and the response of 32 kinds of materials to mustard gas is tested.Therefore,it has great practical significance to select materials for the rapid response and efficient identification of typical low volume fraction warfare chemical agents in the future.

关 键 词：金属氧化物半导体 气体传感器 芥子气 响应 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置] X83[自动化与计算机技术—控制科学与工程]