扩散硅压力传感器失效研究  

Failure Research of Diffused Silicon Pressure Sensors

作　　者：刘炳 林杰锋 LIU Bing;LIN Jiefeng(CEPREI,Guangzhou 511370,China)

机构地区：[1]工业和信息化部电子第五研究所,广东广州511370

出　　处：《电子产品可靠性与环境试验》2023年第3期48-55,共8页Electronic Product Reliability and Environmental Testing

摘　　要：扩散硅压力传感器具有精度高、利于小型化和智能化等特点而被广泛使用。针对该类传感器出现的不同失效模式,合理采用X射线检测系统、OBIRCH定位、荧光定位和SEM&EDS等技术,可以快速准确地定位失效位置。列举了芯片破裂、过电击穿、腐蚀迁移和连接不良等典型的失效案例,并介绍了在实际分析过程中如何应用上述定位分析手段,对分析类似失效案例起到了一定的参考作用。Diffused silicon pressure sensors are widely used because of their high precision,miniaturization,and intelligence.According to the different failure modes of such sensors,X-ray detection system,OBIRCH positioning,fluorescence positioning,SEM&EDS and other technologies can be reasonably used to quickly and accurately locate the failure position.The typical failure cases,such as chip rupture,overelectric breakdown,corrosion migration,and poor connection,are listed,and how to apply the above positioning analysis methods in the actual analysis process is introduced,which plays a certain reference role in the analysis of similar failure cases.

关 键 词：扩散硅压力传感器 失效分析 荧光定位 光诱导电阻变化 X射线 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]