Mg掺杂对NiO基薄膜能带调控作用  

The regulatory effect of Mg-doping on the energy band of NiO based thin films

作　　者：王新[1] 谭封印 丛凡超 鞠博涵 WANG Xin;TAN Feng-yin;CONG Fan-chao;JU Bo-han(School of Physics,Changchun University of Science and Technology,Changchun 130022,China)

机构地区：[1]长春理工大学物理学院,吉林长春130022

出　　处：《吉林师范大学学报（自然科学版）》2023年第3期11-17,共7页Journal of Jilin Normal University:Natural Science Edition

基　　金：吉林省科技发展计划项目(20220101036JC);国家自然科学基金项目(11874091)。

摘　　要：NiO是一种新型的宽禁带半导体材料,其带隙宽度为3.6~4.0 eV,在紫外探测等领域具有广泛应用.为了研究元素掺杂对NiO薄膜能带的调节作用,首先采用Material Studio软件构建了不同Mg掺杂量的Ni_(x)Mg_(1-x)O材料,然后采用Castep等相关模块对这些材料的能带、态密度、光学特性等进行了模拟和分析.另外,采用共溅射法通过固定MgO靶溅射功率、调整NiO靶溅射功率制备了不同Mg掺杂量的Ni_(x)Mg_(1-x)O薄膜,发现模拟结果和实验结果规律一致.随着Mg掺杂量的增加,Ni_(x)Mg_(1-x)O薄膜的带隙增加,说明Mg掺杂对NiO薄膜的能带调节作用明显,这为制备更短波长的NiO基薄膜材料和器件奠定了理论和技术基础.NiO is a new wide band gap semiconductor material with a band gap of 3.6~4.0 eV,and it has wide application such as ultraviolet detection.In order to study the regulatory effect of element doping on the energy band of NiO thin films,Ni_(x)Mg_(1-x)O thin films with different Mg doping concentrations was first constructed by using“Material Studio”software,and then the energy band,density of states and optical characteristics of these thin films were simulated and analyzed by using relevant modules such as CASTEP.In addition,Ni_(x)Mg_(1-x)O thin films with different Mg concentrations were prepared by magnetron sputtering equipment and“co sputtering”method as fixing the MgO sputtering target power and adjusting the NiO target sputtering power.It is found that the simulation results are consistent with the experimental results.With the increase of Mg concentrations,the band gap of Ni_(x)Mg_(1-x)O thin films increases.It indicates that Mg doping has an obvious effect on the energy band adjustment of NiO thin films,and it provide a theoretical and technical foundation for the preparation of NiO based thin film materials and devices with shorter wavelengths.

关 键 词：NiO薄膜 Mg掺杂 能带 磁控溅射 光学 

分 类 号：TB383.2[一般工业技术—材料科学与工程]