High-speed multiwavelength InGaAs/InP quantum well nanowire array micro-LEDs for next generation optical communications  

作　　者：Fanlu Zhang Zhicheng Su Zhe Li Yi Zhu Nikita Gagrani Ziyuan Li Mark Lockrey Li Li Igor Aharonovich Yuerui Lu Hark Hoe Tan Chennupati Jagadish Lan Fu 

机构地区：[1]Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems,Department of Electronic Materials Engineering,Research School of Physics,The Australian National University,Canberra ACT 2601,Australia [2]School of Electronic Science and Engineering,Southeast University,Nanjing 210096,China [3]Microstructural Analysis Unit,University of Technology Sydney,Sydney NSW 2007,Australia [4]Australian National Fabrication Facility ACT Node,Research School of Physics,The Australian National University,Canberra ACT 2601,Australia [5]ARC Centre of Excellence for Transformative Meta-Optical Systems,Faculty of Science,University of Technology Sydney,Sydney NSW 2007,Australia [6]School of Engineering,College of Engineering and Computer Science,The Australia National University,Canberra,Canberra ACT 2601,Australia

出　　处：《Opto-Electronic Science》2023年第5期1-11,共11页光电科学（英文）

摘　　要：Miniaturized light sources at telecommunication wavelengths are essential components for on-chip optical communication systems.Here,we report the growth and fabrication of highly uniform p-i-n core-shell InGaAs/InP single quantum well(QW)nanowire array light emitting diodes(LEDs)with multi-wavelength and high-speed operations.Two-dimensional cathodoluminescence mapping reveals that axial and radial QWs in the nanowire structure contribute to strong emission at the wavelength of~1.35 and~1.55μm,respectively,ideal for low-loss optical communications.As a result of simultaneous contributions from both axial and radial QWs,broadband electroluminescence emission with a linewidth of 286 nm is achieved with a peak power of~17μW.A large spectral blueshift is observed with the increase of applied bias,which is ascribed to the band-filling effect based on device simulation,and enables voltage tunable multi-wavelength operation at the telecommunication wavelength range.Multi-wavelength operation is also achieved by fabricating nanowire array LEDs with different pitch sizes on the same substrate,leading to QW formation with different emission wavelengths.Furthermore,high-speed GHz-level modulation and small pixel size LED are demonstrated,showing the promise for ultrafast operation and ultracompact integration.The voltage and pitch size controlled multi-wavelength highspeed nanowire array LED presents a compact and efficient scheme for developing high-performance nanoscale light sources for future optical communication applications.

关 键 词：INGAAS/INP quantum well NANOWIRES LEDS 

分 类 号：TN929.1[电子电信—通信与信息系统] TN312.8[电子电信—信息与通信工程]