Surface co-hydrophilization via ammonia inorganic strategy for low-temperature Cu/SiO_(2) hybrid bonding  

作　　者：Qiushi Kang Ge Li Zhengda Li Yanhong Tian Chenxi Wang 

机构地区：[1]State Key Laboratory of Advanced Welding and Joining,Harbin Institute of Technology,Harbin 150001,China

出　　处：《Journal of Materials Science & Technology》2023年第18期161-166,共6页材料科学技术（英文版）

基　　金：financially supported by the National Natural Science Foundation of China(Nos.92164105 and 51975151);the Heilongjiang Provincial Natural Science Foundation of China(No.LH2019E041);the Heilongjiang Touyan Innovation Team Pro-gram(No.HITTY-20190013).

摘　　要：1.Introduction During massive data movements in digital computing systems,several issues have emerged such as high latency,energy ineffi-ciency,and low bandwidth due to the physical separation of pro-cessor and memory units(so-called memory wall)[1-3].To miti-gate the data-movement limitations,three-dimensional(3D)chip integration becomes an optimal solution within von Neumann ar-chitecture since the dense vertical interconnections shorten the distance between chips[4,5].However,the extensively used micro solder bumps for 3D chip stacking impede the further improve-ment of interconnection pitch(<10μm).In this scenario,the Cu/SiO_(2) hybrid bonding technology came into being.Owing to the coexistence of planarized Cu connections and SiO_(2) layers,Cu/SiO_(2) hybrid bonding is the desirable enabler of submicron ultra-dense integration(<1μm),which benefits from Cu-Cu and SiO_(2)-SiO_(2) homogeneous direct bonding replacing micro bumps and underfill[6,7].

关 键 词：BONDING INTERCONNECTION integration 

分 类 号：TG49[金属学及工艺—焊接]