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作 者:屈晓敏 段磊 郭跃伟 于长江 QU Xiaomin;DUAN Lei;GUO Yuewei;YU Changjiang(Hebei Bowei Integrated Circuit Co.,Ltd.,Shijiazhuang 050000,China)
机构地区:[1]河北博威集成电路有限公司,河北石家庄050000
出 处:《通信电源技术》2023年第12期21-23,共3页Telecom Power Technology
摘 要:设计了一款12~16 GHz低噪声、高镜频抑制下变频混频多功能单片微波集成电路(Monolithic Microwave Integrated Circuit,MMIC)芯片,电路基于先进化合物半导体工艺制成,集本振驱动放大器、低噪声放大器及正交双平衡混频器于一体,射频(Radio Frequency,RF)频段覆盖12~16 GHz,中频(Intermediate Frequency,IF)工作范围为2~3.5 GHz,芯片面积约为6 mm^(2),实现了高集成度。芯片实测结果表明,在工作频带内,当本振信号输入为0 dBm、射频信号输入为-20 dBm时,噪声系数小于1.5 dB,变频增益典型值为14 dB,镜像抑制大于30 dB。该芯片整体结构紧凑,具有低噪声、高镜频抑制以及高隔离度等良好性能,非常适合应用于接收前端。We have designed a multifunctional monolithic microwave integrated circuit(MMIC)chip with low noise,high mirror suppression,down conversion,and mixing capabilities ranging from 12 to 16 GHz.The circuit is based on advanced compound semiconductor technology and integrates local oscillator drive amplifiers,low noise amplifiers,and orthogonal double balanced mixers.The RF frequency band covers 12 to 16 GHz,The intermediate frequency(IF)has a working range of 2~3.5 GHz and a chip area of approximately 6 mm^(2),achieving high integration.The actual measurement results of the chip indicate that within the working frequency band,when the local oscillator signal input is 0 dBm and the RF signal input is-20 dBm,the noise figure is less than 1.5 dB,the typical frequency conversion gain is 14 dB,and the mirror suppression is greater than 30 dB.The overall structure of the chip is compact,with good performance such as low noise,high mirror frequency suppression,and high isolation,making it very suitable for application in receiving front-end.
关 键 词:下变频混频 多功能芯片 单片微波集成电路(MMIC)
分 类 号:TN722[电子电信—电路与系统]
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