一种新型环形上DBR刻蚀微结构VCSEL及其空心光束  

A novel ring-shaped top-DBR etched microstructure VCSEL with a hollow beam

作　　者：逄超 晏长岭 杨静航 钱冉 李奕霏 PANG Chao;YAN Chang-Ling;YANG Jing-Hang;QIAN Ran;LI Yi-Fei(State Key Lab on High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130000,China)

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,吉林长春130000

出　　处：《红外与毫米波学报》2023年第4期462-467,共6页Journal of Infrared and Millimeter Waves

基　　金：Supported by Jilin Province Science and Technology Department project(20220101122JC);Changchun University of Science and Technology project(627011102)。

摘　　要：设计了带有质子注入高阻区的刻蚀微结构面发射半导体激光器结构,使得从出光口到上DBR形成环形波导,进而直接产生空心激光束输出。使用FDTD软件计算了刻蚀微结构VCSEL的光场分布,得到的环形模式图样在不同模式数目下都能保持空心光束的特性。制备了室温下激射波长为848 nm的微结构VCSEL,并测试其输出特性。阈值电流为0.27 A,峰值功率最高可达170 mW。不同电流下的近场图都显示出非常明显的空心环形光斑,远场光强分布曲线也符合空心光束的特性。该新型VCSEL技术为空心光束甚至阵列器件的发展提供了一种新的方法。The structure of a novel ring-shaped top-DBR etched microstructure VCSEL with a proton implantation high resistance region was designed.A ring column structure was formed from the upper electrode to the active re⁃gion,which directly generated a hollow laser beam output.The optical field distribution of the etched microstruc⁃ture VCSEL was calculated by FDTD software,and the obtained ring-shaped patterns maintained the hollow beam characteristics under the different mode numbers.We fabricated the etched microstructure VCSEL with a lasing wavelength of 848 nm at room temperature and investigated its performance.The threshold current was 0.27 A and the peak power was up to 170 mW.The near-field patterns of different currents clearly displayed hol⁃low ring-shaped spots.The distribution curves of far-field light intensity matched the characteristics of a hollow beam as well.This novel VCSEL provides a new approach for the development of hollow beams and even array devices.

关 键 词：垂直腔面发射半导体激光器 空心激光束 刻蚀结构 质子注入 

分 类 号：TN248.4[电子电信—物理电子学]