波长拓展型InGaAsBi近红外探测器  

Wavelength extended InGaAsBi near infrared photodetector

作　　者：冯铎 代金梦 曹有祥 张立瑶 FENG Duo;DAI Jin-Meng;CAO You-Xiang;ZHANG Li-Yao(Department of Physics,University of Shanghai for Science and Technology,Shanghai 200093,China)

机构地区：[1]上海理工大学物理系,上海200093

出　　处：《红外与毫米波学报》2023年第4期468-475,共8页Journal of Infrared and Millimeter Waves

基　　金：Supported by the National Natural Science Foundation of China(61904106)。

摘　　要：InGaAs光电探测器广泛应用于短波红外检测。在InGaAs中掺入Bi可以减小带隙,延长探测波长。通过控制In和Bi的组分可使In_(y)Ga_(1-y)As_(1-x)Bix与InP晶格匹配,同时,扩展探测波长至3μm以上。设计并研究了In_(0.394)Ga_(0.606)As_(0.913)Bi_(0.087)p-i-n光电探测器的光电性能。计算了不同温度、吸收层厚度和p(n)区掺杂浓度下的暗电流和响应率特性。获得了3μm的截止波长。该结构为拓展InP基晶格匹配的短波红外探测器的探测波长提供了一种可行的方法。InGaAs photodetector is widely used in SWIR detection.Bi incorporation into InGaAs can reduce the bandgap,extending the detection wavelength.By controlling of the In and Bi compositions,the detection wave⁃length could be extended to over 3μm from In_(y)Ga_(1-y)As_(1-x)Bix,lattice-matched to InP.An In_(0.394)Ga_(0.606)As_(0.913)Bi_(0.087)pi-n photodetector is designed and its performance is numerically investigated.Dark currents and responsivity spec⁃tra are calculated with different temperatures,absorption layer thicknesses and doping concentrations.A 50%cut⁃off wavelength of 3μm is achieved.The proposed structure provides a feasible way to fabricate InGaAsBi based SWIR detector with longer detection wavelength.

关 键 词：铟镓砷铋 暗电流 响应率 短波红外 

分 类 号：TN215[电子电信—物理电子学]