带有原位生长SiN_(x)绝缘层的AlN/GaN毫米波高效率MIS-HEMT器件  

High-efficiency AlN/GaN MIS-HEMTs with SiN_(x)insulator grown in-situ for millimeter wave applications

作　　者：陈晓娟 张一川[2] 张昇 李艳奎 牛洁斌[2] 黄森[2] 马晓华[1] 张进成[1] 魏珂[2] CHEN Xiao-Juan;ZHANG Yi-Chuan;ZHANG Shen;LI Yan-Kui;NIU Jie-Bin;HUANG Sen;MA Xiao-Hua;ZHANG Jin-Cheng;WEI Ke(Xidian University,Xi'an 710071,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)

机构地区：[1]西安电子科技大学,陕西西安710071 [2]中国科学院微电子研究所,北京100029

出　　处：《红外与毫米波学报》2023年第4期483-489,共7页Journal of Infrared and Millimeter Waves

基　　金：Supported by the National Natural Science Foundation of China(61822407,62074161,62004213);the National Key Research and De-velopment Program of China under(2018YFE0125700)。

摘　　要：本文采用金属有机化学气相沉积(MOCVD)生长原位SiN_(x)栅介质制备了用于Ka波段高功率毫米波应用的AlN/GaN金属绝缘体半导体高电子迁移率晶体管(MIS-HEMTs)。原位生长SiN_(x)栅介质显著抑制了栅反向漏电、栅介质/AlN界面态密度和电流坍塌。所研制的MIS HEMTs在V_(GS)=2 V时最大饱和输出电流为2.2 A/mm,峰值跨导为509 m S/mm,在V_(GS)=-30 V时肖特基栅漏电流为4.7×10^(-6)A/mm。采用0.15μm T形栅技术,获得98 GHz的fT和165 GHz的f_(MAX)。大信号测量表明,在连续波模式下,漏极电压V_(DS)=8 V时,MIS HEMT在40 GHz下输出功率密度2.3 W/mm,45.2%的功率附加效率(PAE),而当V_(DS)增加到15 V时,功率密度提升到5.2 W/mm,PAE为42.2%。In this work,high-efficiency AlN/GaN metal-insulator-semiconductor high electron mobility transis⁃tors(MIS-HEMTs)have been fabricated for millimeter wave applications.A 5-nm SiN_(x) insulator is grown in-situ as the gate insulator by metal-organic chemical vapor deposition(MOCVD),contributing to remarkably sup⁃pressed gate leakage,interface state density and current collapse.The fabricated MIS-HEMTs exhibit a maximum drain current of 2.2 A/mm at V_(GS)=2 V,an extrinsic peak Gm of 509 mS/mm,and a reverse Schottky gate leakage current of 4.7×10^(-6) A/mm when V_(GS)=-30 V.Based on a 0.15μm T-shaped gate technology,an fT of 98 GHz and f_(MAX) of 165 GHz were obtained on the SiN/AlN/GaN MIS-HEMTs.Large signal measurement shows that,in a continuous-wave mode,the MIS-HEMTs deliver an output power density(Pout)of 2.3 W/mm associated with a power-added efficiency(PAE)of 45.2%at 40 GHz,and a Pout(PAE)of 5.2 W/mm(42.2%)when V_(DS) was fur⁃ther increased to 15 V.

关 键 词：AlN/GaN 金属绝缘体半导体高电子迁移率晶体管 KA波段 低损耗 低偏压 

分 类 号：O48[理学—固体物理]