压敏电阻工艺误差的影响分析  

Influence Analysis of Technological Error of Varistor

作　　者：王婧[1] 雷程[1] 梁庭[1] 冀鹏飞 刘润鹏 WANG Jing;LEI Cheng;LIANG Ting;JI Pengfei;LIU Runpeng(North University of China,State Key Laboratory of Dynamic Measurement Technology,Taiyuan 030051,China)

机构地区：[1]中北大学,省部共建动态测试技术国家重点实验室,山西太原030051

出　　处：《仪表技术与传感器》2023年第7期8-11,16,共5页Instrument Technique and Sensor

基　　金：山西省重点研发计划项目(202102030201001,202102030201009)。

摘　　要：为了解决由于压敏电阻工艺过程中的工艺误差导致压力传感器输出灵敏度和输出量程产生偏差的问题,通过定位压敏芯片在工艺过程中产生误差的工艺步骤,分析相关步骤的误差对器件性能的影响。利用共聚焦显微镜、扫描电子显微镜等设备对欧姆接触区扩散开孔、DRIE刻蚀压敏电阻以及背腔刻蚀3个工艺步骤中引入的误差进行分析,分析结果表明前两个步骤引入的误差主要表现为电阻值的缩小,使得输出电压偏差最大达到8.24%,而背腔刻蚀引入的误差主要表现在电阻变化率上,使得输出电压偏差最大达到5%。在制备压敏电阻过程中可以通过控制这3个步骤的工艺精度来解决引入的工艺误差,从而提高器件的稳定性。In order to solve the problem of deviation between the output sensitivity and output range of the pressure sensor caused by the process error in the process of the varistor,the impact of the error of the relevant steps on the device performance was analyzed by locating the process steps of the varistor chip that generate errors in the process.The confocal microscope,scanning electron microscope and other equipment were used to analyze the errors introduced in the three process steps of ohmic contact area diffusion opening,DRIE etching varistor and back cavity etching.The analysis results show that the errors introduced in the first two steps mainly reflect the reduction of resistance value,making the maximum output voltage deviation up to 8.24%,while the errors introduced in back cavity etching mainly reflected the resistance change rate,making the maximum output voltage deviation up to 5%.In the process of preparing varistors,the introduced process errors can be solved by controlling the process accuracy of these three steps,so as to improve the stability of the device.

关 键 词：压力传感器 压敏电阻 MEMS 工艺误差 灵敏度 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]