激光晶化形成纳米硅基电致发光材料及其性质研究  

Study on the formation and properties of nano silicon based electroluminescent materials by laser crystallization

作　　者：陈贺 李晓静 张洋洋[1] CHEN He;LI Xiaojing;ZHANG Yangyang(Huanghe Science and Technology Collegel,Zhengzhou 450000,China)

机构地区：[1]黄河科技学院,郑州450000

出　　处：《激光杂志》2023年第7期255-260,共6页Laser Journal

基　　金：河南省科技攻关项目(No.202102210021);河南省高等学校青年骨干教师培养计划(No.2019GGJS273);郑州市基础研究及应用基础研究专项项目(No.ZZSZX202104);河南省科技厅项目(No.212102210187)。

摘　　要：为实现基于硅基材料的高效光源,提出激光晶化形成纳米硅基电致发光材料性能研究,来明确了激光晶化形成纳米硅基电致发光材料的基本性能。主要以选择的纳米硅基电致发光材料作为研究对象,首先采用激光晶化技术完成制备工作,其次设计对电致发光材料性能计算方法,最后设计吸收光谱、固态与薄膜态量子产量、发光寿命、发光率四方面的测定环节,依此对晶化处理和未晶化的两个样本进行电致发光材料测定。结果表明:晶化后的电致发光材料中存在尺寸可控的纳米硅量子,且当氧气量充足时,晶化后的致电发光材料的硅粒子产出量会逐渐增加;光学带隙要比原始沉积样本要小,且当精光密度增加时光学带隙发生进一步缩减;晶化后的样本发光寿命有、无氧两种状态均为1200 ns,发光率可达到99%。以上结果说明激光晶化形成纳米硅基电致发光材料性能优越,具有较强的发展潜力。以期可为日后的纳米硅基电致发光材料研究与制作过程中提供理论支撑,在此基础上制备出性能更加优异的电致发光材料。In order to realize high-efficiency light source based on silicon-based materials,this paper proposes the research on the properties of nano silicon-based electroluminescent materials formed by laser crystallization,so as to clarify the basic properties of nano silicon-based electroluminescent materials formed by laser crystallization.This paper mainly takes the selected nano silicon-based electroluminescent materials as the research object.Firstly,the preparation work is completed by laser crystallization technology,secondly,the calculation method of electroluminescent material performance is designed,and finally,the measurement links of absorption spectrum,solid-state and thin-film quantum yield,luminescence lifetime and luminescence rate are designed.Based on this,the electroluminescent materials are measured for two samples of crystallization treatment and amorphous.The results show that there are nano silicon quantum with controllable size in the crystallized electroluminescent material,and when the amount of oxygen is sufficient,the output of silicon particles in the crystallized electroluminescent material will gradually increase;The optical band gap is smaller than the original deposited sample,and the optical band gap is further reduced when the optical density increases;The luminescence lifetime of the crystallized sample is 1200 ns in both oxygen free and oxygen free states,and the luminescence rate can reach 99%.The above results show that nano silicon based electroluminescent materials formed by laser crystallization have excellent properties and strong development potential.It is hoped that this paper can provide theoretical support for the future research and fabrication of nano silicon based electroluminescent materials,and on this basis,more excellent electroluminescent materials can be prepared.

关 键 词：纳米硅基电致发光材料 纳米硅量子 激光晶化 材料制备 量子限制效应 发光效率 

分 类 号：TN304.12[电子电信—物理电子学]