基于GaAs工艺的Ku波段高增益低噪声放大器  

Ku Band High Gain Low Noise Amplifier Based on GaAs Technology

作　　者：贾瑞林 王云秀 段寅龙 樊琴 

机构地区：[1]西华师范大学电子信息工程学院,四川南充637009 [2]西华师范大学物理与天文学院,四川南充637009

出　　处：《大众科技》2023年第7期1-5,共5页Popular Science & Technology

基　　金：四川省教育厅重点项目(16ZA0172)。

摘　　要：文章采用0.13μm GaAs PHEMT工艺技术设计了一款MMIC低噪声放大器(LNA),该低噪声放大器工作频段为13~17 GHz,采用了双电源供电的两级放大结构,偏置电路采用电感加并联电容的滤波结构来隔离直流信号与射频信号,在第二级放大器的栅极和漏极之间引入负反馈网络来增加电路的稳定性、拓展放大器的带宽和改善增益平坦度。仿真结果表明:在13~17GHz频带范围内,低噪声放大器的噪声系数小于1.8dB,增益大于23dB,增益平坦度为±1.4dB,输入驻波比小于1.58 dB,输出驻波比小于1.45 dB,芯片面积仅为1.8 mm×1.2 mm。In this paper,a MMIC low noise amplifier(LNA)is designed by using 0.13μm GaAs PHEMT technology.The operating frequency band of the LNA is 13 to 17 GHz.A two-stage amplifier structure with dual power supply is adopted.The bias circuit adopts a filter structure of inductance and parallel capacitor to isolate the DC signal from the RF signal.A negative feedback network is introduced between gate and drain of the secondary amplifier to increase circuit stability,expand amplifier bandwidth and improve gain flatness.The simulation results show that in the 13 to 17 GHz frequency band range,the noise figure of the low noise amplifier is less than 1.8 dB,the gain is greater than 23 dB,the gain flatness is±1.4 dB,the input standing wave ratio is less than 1.58 dB,the output standing wave ratio is less than 1.45 dB,and the chip area is only 1.8 mm×1.2 mm.

关 键 词：GaAs PHEMT 微波单片集成电路 低噪声放大器 

分 类 号：TN722.3[电子电信—电路与系统]