Spin injection into heavily-doped n-GaN via Schottky barrier  

作　　者：Zhenhao Sun Ning Tang Shuaiyu Chen Fan Zhang Haoran Fan Shixiong Zhang Rongxin Wang Xi Lin Jianping Liu Weikun Ge Bo Shen 

机构地区：[1]State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking University,Beijing 100871,China [2]Frontiers Science Center for Nano-optoelectronics&Collaboration Innovation Center of Quantum Matter,Peking University,Beijing 100871,China [3]Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO),Chinese Academy of Sciences,Suzhou 215123,China [4]International Center for Quantum Materials,Peking University,Beijing 100871,China

出　　处：《Journal of Semiconductors》2023年第8期57-61,共5页半导体学报（英文版）

基　　金：This work was supported by the National Key Research and Development Program of China(Nos.2022YFB3605604,and 2018YFE0125700);the National Natural Science Foundation of China(Nos.62225402,61927806,62234001,and U22A2074).The authors are grateful for the technical support for Nano-X from Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences(SINANO),Chinese Academy of Sciences.

摘　　要：Spin injection and detection in bulk GaN were investigated by performing magnetotransport measurements at low temperatures.A non-local four-terminal lateral spin valve device was fabricated with Co/GaN Schottky contacts.The spin injection efficiency of 21%was achieved at 1.7 K.It was confirmed that the thin Schottky barrier formed between the heavily ndoped GaN and Co was conducive to the direct spin tunneling,by reducing the spin scattering relaxation through the interface states.

关 键 词：GAN spin injection Schottky barrier MAGNETORESISTANCE 

分 类 号：O469[理学—凝聚态物理]