InAs/GaSbⅡ类超晶格长波红外探测器研究进展  

Research Progress of InAs/GaSb Type-II Superlattice Long-wave Infrared Detector

作　　者：田亚芳[1] 史衍丽 李方江[1] TIAN Yafang;SHI Yanli;LI Fangjiang(Faculty of Science,Kunming University of Science and Technology,Kunming 650091,China;School of Physics and Astronomy,Yunnan University,Kunming 650091,China)

机构地区：[1]昆明理工大学理学院,云南昆明650091 [2]云南大学物理与天文学院,云南昆明650091

出　　处：《红外技术》2023年第8期799-807,共9页Infrared Technology

基　　金：云南贵金属实验室科技计划项目(YPML-2022050220)。

摘　　要：本文系统报道了基于InAs/GaSbⅡ类超晶格(T2SLs)的长波红外探测器的研究进展。从衬底、材料生长以及器件性能角度对比分析了基于GaSb、InAs衬底的各种器件结构的优缺点。分析结果表明,以InAs为衬底、吸收区材料为InAs/InAs1-xSbx、PB1IB2N型的结构为相对优化的器件结构设计,结合ZnS和Ge的多层膜结构设计或者重掺杂缓冲层,同时采用电感耦合等离子体(inductively coupled plasma)干法刻蚀工艺,该器件的50%截止波长可达12μm,量子效率(quantum efficiency)可提升到65%以上,暗电流密度降低至1×10^(-5) A/cm^(2)。并归纳总结了InAs/GaSb T2SLs长波红外探测器未来的发展趋势。In this study,the research progress of long-wave infrared detectors based on InAs/GaSb type-II superlattices(T2SLs)is systematically reported.The advantages and disadvantages of various device structures based on GaSb and InAs substrates are compared and analyzed from the perspective of substrate,material growth,and device performance.The results show that the structure of the device with InAs as the substrate,InAs/InAs_(1-x)Sb_(x) as the absorber material,and PB1IB2N type is a relatively optimized design.Combining the multilayer structure design of ZnS and Ge,a heavy doping buffer layer,and the inductively coupled plasma(ICP)dry etching process,the 50%cutoff wavelength of the device can achieve 12μm,the quantum efficiency(QE)can be increased to more than 65%,and the dark current density can be reduced to 1×10^(-5) A/cm^(2).Finally,the future development trend of InAs/GaSb T2SLs long-wave infrared detectors is summarized.

关 键 词：InAs/GaSbⅡ类超晶格 器件结构 暗电流 量子效率 结构优化 

分 类 号：TN213[电子电信—物理电子学]