一种基于单壁碳纳米管网络的柔性场效应晶体管器件  

A Flexible Field-Effect Transistor Device Based on Single-Walled Carbon Nanotube Networks

作　　者：王怀鹏 张伟博 谢丹[1] WANG Huaipeng;ZHANG Weibo;XIE Dan(School of Integrated Circuits,Tsinghua University,Beijing 100084,China;School of Electrical Engineering,North China Electric Power University,Beijing 102206,China)

机构地区：[1]清华大学集成电路学院,北京100084 [2]华北电力大学电气与电子工程学院,北京102206

出　　处：《微处理机》2023年第4期1-3,共3页Microprocessors

摘　　要：针对未来可穿戴电子设备对高性能柔性场效应晶体管的迫切需求,提出一种基于单壁碳纳米管网络的柔性场效应晶体管的制备方法,采用超柔的聚酰亚胺薄膜(PI)作为衬底,以具有高介电常数的氧化铪作为栅介质层,由一维碳纳米管搭建的网路状结构作为晶体管导电沟道。实验结果表明,在超柔PI衬底上,所制备柔性场效应晶体管表现出典型的P型导电特性,开关比达到10^(5)以上,具有良好的开关特性。所制备器件在200次弯折之后,仍能表现出10^(4)以上的高开关比,证明所制备柔性晶体管器件具有良好的耐弯折特性,具有应用于可穿戴电子器件的巨大潜力。In view of the urgent demand for high-performance flexible field-effect transistors in wear-able electronic devices in the future,a method for fabricating flexible field effect transistors based on single-walled carbon nanotube networks is proposed.Ultra-flexible polyimide(PI)film is used as the substrate,hafnium oxide with high dielectric constant is used as the gate dielectric layer,and the network structure built by one-dimensional carbon nanotubes is used as the transistor conductive channel.The experimental results show that the prepared flexible field effect transistor shows typical P-type conductivity on the ultra-flexible PI substrate,with a switching ratio of over 10^(5) and good switching characteristics.The device still maintains a high switching ratio of over 10^(4) after 200 bending cycles,demonstrating excellent bending resistance of the fabricated flexible transistor device and tremendous potential for application in wearable electronic devices.

关 键 词：碳纳米管 柔性器件 场效应晶体管 电学特性 

分 类 号：TN386[电子电信—物理电子学]